A Multi-Band CMOS Frequency Divider Integrated Circuit
This paper presents a 65 nm CMOS divider circuit that (1) operates as a divider with a division ratio of 64 based on digital logic when the DC supply voltage is low and (2) operates as a multi-band injection-locked frequency divider (ILFD) with a unique division ratio for each band of operation when...
Saved in:
Published in | Journal of semiconductor technology and science Vol. 25; no. 2; pp. 176 - 183 |
---|---|
Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
대한전자공학회
01.04.2025
|
Subjects | |
Online Access | Get full text |
ISSN | 2233-4866 1598-1657 1598-1657 2233-4866 |
DOI | 10.5573/JSTS.2025.25.2.176 |
Cover
Abstract | This paper presents a 65 nm CMOS divider circuit that (1) operates as a divider with a division ratio of 64 based on digital logic when the DC supply voltage is low and (2) operates as a multi-band injection-locked frequency divider (ILFD) with a unique division ratio for each band of operation when the supply voltage is high.
The proposed divider consists of a six-stage cascade of current-mode logic (CML) dividers with buffer circuits.
The frequency span of operation in the ILFD mode is divided into 7 sub-bands from 2 to 27 GHz depending on the supply voltage. The proposed circuit demonstrates a record 528 ILFD division ratio with a low power consumption of 0.926 mW, which is the best performance reported so far in the literature. A phase noise of-102.27 dBc is measured at 100 kHz offset for a 27.113 GHz input signal KCI Citation Count: 0 |
---|---|
AbstractList | This paper presents a 65 nm CMOS divider circuit that (1) operates as a divider with a division ratio of 64 based on digital logic when the DC supply voltage is low and (2) operates as a multi-band injection-locked frequency divider (ILFD) with a unique division ratio for each band of operation when the supply voltage is high.
The proposed divider consists of a six-stage cascade of current-mode logic (CML) dividers with buffer circuits.
The frequency span of operation in the ILFD mode is divided into 7 sub-bands from 2 to 27 GHz depending on the supply voltage. The proposed circuit demonstrates a record 528 ILFD division ratio with a low power consumption of 0.926 mW, which is the best performance reported so far in the literature. A phase noise of-102.27 dBc is measured at 100 kHz offset for a 27.113 GHz input signal KCI Citation Count: 0 |
Author | Hwang, Jae-Yeon Bae, Sung-Hoon Roblin, Patrick Kang, Bo-Seong Kim, Young-Gi Jang, Hyeong-Jun |
Author_xml | – sequence: 1 givenname: Young-Gi surname: Kim fullname: Kim, Young-Gi – sequence: 2 givenname: Sung-Hoon surname: Bae fullname: Bae, Sung-Hoon – sequence: 3 givenname: Bo-Seong surname: Kang fullname: Kang, Bo-Seong – sequence: 4 givenname: Hyeong-Jun surname: Jang fullname: Jang, Hyeong-Jun – sequence: 5 givenname: Jae-Yeon surname: Hwang fullname: Hwang, Jae-Yeon – sequence: 6 givenname: Patrick surname: Roblin fullname: Roblin, Patrick |
BackLink | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART003195571$$DAccess content in National Research Foundation of Korea (NRF) |
BookMark | eNotkE9LwzAchoNMcJt-AU89C635n_Q4p9PJxsDWc8iyX0bcbDVthX17Wye88Fwe3sMzQaOqrgChW4IzIRS7fy3KIqOYimxYRpS8QGMicp0SKdQIjSllLOVayis0aZoPjKVWuRojOUvW3bEN6YOtdsl8vSmSRYTvDip3Sh7DT9hBTJZVC_toW-iNEF0X2mt06e2xgZt_TtH74qmcv6SrzfNyPluljjLRptR6yjhmRG491dqCchrnFjQITnKGGd96AM_yHXAiOcfSeSuoAAoSEwdsiu7Ov1X05uCCqW344742h2hmb-XSEKwwVxT3Mj3LLtZNE8Gbrxg-bTz1ihkymSGTGTKZYabPxH4Bkp1a9Q |
ContentType | Journal Article |
DBID | AAYXX CITATION ACYCR |
DOI | 10.5573/JSTS.2025.25.2.176 |
DatabaseName | CrossRef Korean Citation Index |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1598-1657 2233-4866 |
EndPage | 183 |
ExternalDocumentID | oai_kci_go_kr_ARTI_10704720 10_5573_JSTS_2025_25_2_176 |
GroupedDBID | 9ZL AAYXX ADDVE AENEX ALMA_UNASSIGNED_HOLDINGS CITATION DBRKI FRP GW5 HH5 JDI OK1 TDB TR2 ACYCR C1A KVFHK MZR ZZE |
ID | FETCH-LOGICAL-c235t-2af2340316bf288ae7c809ae8e54193034bfeef39de4164406cfa525e2e601ce3 |
ISSN | 2233-4866 1598-1657 |
IngestDate | Sun Apr 27 03:10:36 EDT 2025 Tue Jul 01 04:57:30 EDT 2025 |
IsPeerReviewed | false |
IsScholarly | true |
Issue | 2 |
Language | English |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-c235t-2af2340316bf288ae7c809ae8e54193034bfeef39de4164406cfa525e2e601ce3 |
PageCount | 8 |
ParticipantIDs | nrf_kci_oai_kci_go_kr_ARTI_10704720 crossref_primary_10_5573_JSTS_2025_25_2_176 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2025-04-01 |
PublicationDateYYYYMMDD | 2025-04-01 |
PublicationDate_xml | – month: 04 year: 2025 text: 2025-04-01 day: 01 |
PublicationDecade | 2020 |
PublicationTitle | Journal of semiconductor technology and science |
PublicationYear | 2025 |
Publisher | 대한전자공학회 |
Publisher_xml | – name: 대한전자공학회 |
SSID | ssj0068797 |
Score | 2.3181827 |
Snippet | This paper presents a 65 nm CMOS divider circuit that (1) operates as a divider with a division ratio of 64 based on digital logic when the DC supply voltage... |
SourceID | nrf crossref |
SourceType | Open Website Index Database |
StartPage | 176 |
SubjectTerms | 전기공학 |
Title | A Multi-Band CMOS Frequency Divider Integrated Circuit |
URI | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART003195571 |
Volume | 25 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
ispartofPNX | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2025, 25(2), , pp.176-183 |
journalDatabaseRights | – providerCode: PRVFSB databaseName: Free Full-Text Journals in Chemistry customDbUrl: eissn: 1598-1657 dateEnd: 99991231 omitProxy: true ssIdentifier: ssj0068797 issn: 2233-4866 databaseCode: HH5 dateStart: 20010101 isFulltext: true titleUrlDefault: http://abc-chemistry.org/ providerName: ABC ChemistRy |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3da9swEBdp97I9jH2y7gvD9laUxZIty49p2ZYVuj2khb4JSz6PULBHljy0r_3HdyerttptsA6ME474sH2X-9LdT4y9t-iknW5qPssqxbNG4V9KpYrXkFa2cIXUDQ0nH39Vi9Ps6Cw_m0yuoq6l7cZO3eUf50r-R6pIQ7nSlOwdJDswRQJ-R_niGSWM53-S8Xzfz8_yA6p-Hx5_W2Ic2rdGX6At8xN2vuTn8SDwF6u1265uFOOjePQntcl3LeG_UufhUHL3ywvBUY4r9l6NvKngn1djOTR0-iB10UUL_KEofdDxJXTBV_oB_56-uCAqP9q2cRFC5FHvirdVGGRInmkVUK2DLS0xQVU9_vS1se2nnINSichypoWKnHDa725z277neUE4E2izllO6jSkd0-HSGEz7lpMbWg8x6SEuhngY4mHoMMhjh90ThVLCW_chh1K68Dv0DE_YT14Rjw-_38eN6GanXTdRsHLyiD0MUk3mvco8ZhNon7AHEfbkU6bmyag8CSlPMihPEpQnGZUnCcrzjJ1--nhyuOBhEw3uhMw3XFSNkBmabmUboXUFhdOzsgINeYbB-0xmtgFoZFkDxuYZxneuqXKRgwDM1R3I52y37Vp4wZK6Sm1pdV1LZTHutCVASoD8oLSEUlV7bP_64c2PHivF_P1177F3-H7MuVsZgjinz--dOV8bTOS-4HUF4ZjOXt6J5yt2f9TO12x3s97CGwwaN_atF-ovyNFmAA |
linkProvider | ABC ChemistRy |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+Multi-Band+CMOS+Frequency+Divider+Integrated+Circuit&rft.jtitle=Journal+of+semiconductor+technology+and+science&rft.au=Kim%2C+Young-Gi&rft.au=Bae%2C+Sung-Hoon&rft.au=Kang%2C+Bo-Seong&rft.au=Jang%2C+Hyeong-Jun&rft.date=2025-04-01&rft.issn=2233-4866&rft.eissn=1598-1657&rft.volume=25&rft.issue=2&rft.spage=176&rft.epage=183&rft_id=info:doi/10.5573%2FJSTS.2025.25.2.176&rft.externalDBID=n%2Fa&rft.externalDocID=10_5573_JSTS_2025_25_2_176 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2233-4866&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2233-4866&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2233-4866&client=summon |