The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates

We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma （ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlineari...

Full description

Saved in:
Bibliographic Details
Published inChinese physics letters Vol. 34; no. 6; pp. 84 - 86
Main Author 王玉冰 尹伟红 韩勤 杨晓红 叶焓 王帅 吕倩倩 尹冬冬
Format Journal Article
LanguageEnglish
Published 01.06.2017
Online AccessGet full text
ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/34/6/067201

Cover

Abstract We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma （ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon, In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger＇s mechanism. In the high bias regime, the values of a increase draxnatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10^4 Vim. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.
AbstractList We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma （ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon, In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger＇s mechanism. In the high bias regime, the values of a increase draxnatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10^4 Vim. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.
Author 王玉冰 尹伟红 韩勤 杨晓红 叶焓 王帅 吕倩倩 尹冬冬
AuthorAffiliation State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Author_xml – sequence: 1
  fullname: 王玉冰 尹伟红 韩勤 杨晓红 叶焓 王帅 吕倩倩 尹冬冬
BookMark eNo9kE1rAjEYhEOxULX9CYXQ-3bztUk8FrFWsO1BCz0UQja-qynbxCbrwX-voggDc5lnYGaAeiEGQOiRkmdKtC4Jq2TBifouuShlSaRihN6gPlWCFrwSpIf618wdGuT8SwilmtI--lluAH_E0PoANuFJC65LMXiHl8mGvI2pwz7g913b-dbuIeFpstsNBMAx4IVvvYuhOGoW8q61XUx4satzl2wH-R7dNrbN8HDxIfp6nSzHb8X8czobv8wLx5juCudGVNe20eAa5UBappgGRoSQbsWkcNaCq2vClQKxsnLUyEpSrepVzS1nhA9Rde51KeacoDHb5P9s2htKzOkic5pvTvMNF0aa80VH7unCbWJY__uwvoLHgBgpSRU_AP6jaXY
Cites_doi 10.1038/nature04233
10.1126/science.1102896
10.1103/PhysRevLett.102.026807
10.1126/science.1220527
10.1103/PhysRevLett.98.186806
10.1038/nphys935
10.1103/PhysRev.82.664
10.1103/PhysRevB.81.041416
10.1073/pnas.0704772104
10.1103/PhysRevD.78.096009
10.1039/C6NR04607J
10.1103/PhysRevB.81.165431
10.1103/RevModPhys.81.109
10.1016/j.ssc.2008.02.024
10.1103/PhysRevLett.100.016602
10.1103/PhysRevB.82.045416
ContentType Journal Article
DBID 2RA
92L
CQIGP
~WA
AAYXX
CITATION
DOI 10.1088/0256-307X/34/6/067201
DatabaseName 维普_期刊
中文科技期刊数据库-CALIS站点
维普中文期刊数据库
中文科技期刊数据库- 镜像站点
CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Physics
DocumentTitleAlternate The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates
EISSN 1741-3540
EndPage 86
ExternalDocumentID 10_1088_0256_307X_34_6_067201
672497617
GroupedDBID 02O
042
1JI
1PV
1WK
29B
2RA
4.4
5B3
5GY
5VR
5VS
5ZH
7.M
7.Q
92L
AAGCD
AAJIO
AAJKP
AALHV
AATNI
ABHWH
ABJNI
ABQJV
ACAFW
ACGFS
ACHIP
AEFHF
AENEX
AFUIB
AFYNE
AHSEE
AKPSB
ALMA_UNASSIGNED_HOLDINGS
ASPBG
ATQHT
AVWKF
AZFZN
BBWZM
CEBXE
CJUJL
CQIGP
CRLBU
CS3
EBS
EDWGO
EJD
EMSAF
EPQRW
EQZZN
FEDTE
HAK
HVGLF
IHE
IJHAN
IOP
IZVLO
JCGBZ
KNG
KOT
LAP
M45
N5L
N9A
NS0
NT-
NT.
P2P
PJBAE
Q02
R4D
RIN
RNS
RO9
ROL
RPA
RW3
S3P
SY9
T37
UCJ
W28
XPP
~02
~WA
-SA
-S~
AAYXX
ACARI
ADEQX
AEINN
AERVB
AGQPQ
AOAED
ARNYC
CAJEA
CITATION
Q--
TGP
U1G
U5K
ID FETCH-LOGICAL-c228t-cc918baf8ecf7ce6a2728e20446cd264caaecbb0377e4da69f656187bdb3a3203
ISSN 0256-307X
IngestDate Wed Oct 01 02:18:50 EDT 2025
Wed Feb 14 09:59:58 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 6
Language English
License http://iopscience.iop.org/info/page/text-and-data-mining
http://iopscience.iop.org/page/copyright
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c228t-cc918baf8ecf7ce6a2728e20446cd264caaecbb0377e4da69f656187bdb3a3203
Notes 11-1959/O4
Yu-Bing Wang,Wei-Hong Yin, Qin Han, Xiao-Hong Yang, Han Ye, Shuai Wang, Qian-Qian Lv, Dong-Dong Yin（State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083）
We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma （ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon, In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger＇s mechanism. In the high bias regime, the values of a increase draxnatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10^4 Vim. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.
PageCount 3
ParticipantIDs crossref_primary_10_1088_0256_307X_34_6_067201
chongqing_primary_672497617
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2017-06-01
PublicationDateYYYYMMDD 2017-06-01
PublicationDate_xml – month: 06
  year: 2017
  text: 2017-06-01
  day: 01
PublicationDecade 2010
PublicationTitle Chinese physics letters
PublicationTitleAlternate Chinese Physics Letters
PublicationYear 2017
References 11
12
13
14
15
16
17
18
1
3
Khalil H M W (19) 2013; 30
5
6
7
Yin W (4) 2015; 24
8
Wang X (2) 2017; 26
9
10
References_xml – ident: 6
  doi: 10.1038/nature04233
– ident: 1
  doi: 10.1126/science.1102896
– ident: 7
  doi: 10.1103/PhysRevLett.102.026807
– ident: 16
  doi: 10.1126/science.1220527
– ident: 10
  doi: 10.1103/PhysRevLett.98.186806
– ident: 9
  doi: 10.1038/nphys935
– ident: 17
  doi: 10.1103/PhysRev.82.664
– volume: 30
  issn: 0256-307X
  year: 2013
  ident: 19
  publication-title: Chin. Phys. Lett.
– ident: 18
  doi: 10.1103/PhysRevB.81.041416
– volume: 26
  issn: 1674-1056
  year: 2017
  ident: 2
  publication-title: Chin. Phys.
– ident: 8
  doi: 10.1073/pnas.0704772104
– ident: 14
  doi: 10.1103/PhysRevD.78.096009
– ident: 15
  doi: 10.1039/C6NR04607J
– ident: 13
  doi: 10.1103/PhysRevB.81.165431
– ident: 5
  doi: 10.1103/RevModPhys.81.109
– volume: 24
  issn: 1674-1056
  year: 2015
  ident: 4
  publication-title: Chin. Phys.
– ident: 11
  doi: 10.1016/j.ssc.2008.02.024
– ident: 3
  doi: 10.1103/PhysRevLett.100.016602
– ident: 12
  doi: 10.1103/PhysRevB.82.045416
SSID ssj0011811
Score 2.1175296
Snippet We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by...
SourceID crossref
chongqing
SourceType Index Database
Publisher
StartPage 84
Title The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates
URI http://lib.cqvip.com/qk/84212X/201706/672497617.html
Volume 34
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVIOP
  databaseName: AUTh Library subscriptions: IOP Publishing
  customDbUrl:
  eissn: 1741-3540
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0011811
  issn: 0256-307X
  databaseCode: IOP
  dateStart: 19840101
  isFulltext: true
  titleUrlDefault: https://iopscience.iop.org/
  providerName: IOP Publishing
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3fixMxEA71RPBF_InnqeTBt5Jrd5Nu0keV057geeId1wNhSdIst1C2em1f_A_8r51JstnVO8QTSljSZhYyXyffTDITQl4B59bAhhzj1cQywdWE6YUYs4ngpuJjk8kKE4U_HhWzU_FhPpkPBj97p5a2G7Nvf1ybV_I_WoU-0Ctmyd5As0kodMAz6Bda0DC0_6zjo1DrQl8OD7obbVLJcgxn-BzbpQZuPXyP5anBuuEWwZd6CShoGHwO8UA6et_ejvh6tes-a8VLtt3axTDIerj0OUCJjZ_FmPP5lr1pV0I0JKE8wZmr2WzVdc9CyPVznWB5HsfPa73qfhpDEZnsjkxFiwX8CYNZ87C4BIsKlIVhcKlvcmP8sr5iPwuZB4FXLDtYQ18EI74BnrmAxu8-pVG_19P-Y51Lpw_9vrtSJQorUVjJRVmUQcwtcjuXRYGXYRx-Ok4bUkCE_OWL7fvbZDClRqlvxMWoGAUxWKrjAibsO0x7j_L0uMvJfXIvOh30dUDQAzJwzUNy5zho8xH5CjiiCUe0wxFNOKJ1Qzsc0RZHdNXQ63BEOxw9JqfvDk7ezli8dYPZPFcbZu00U0ZXytlKWlfoXObK5bjxbxdAn63Wzhoz5lI6sdDFtAKXIFPSLAzXPB_zJ2SnWTXuKaHwh59yYOBg6K1w4NkLIJhgHKbo1Bqtd8lemqTyW6iuUsL0CeDImdwl--20pS__qrpnNx2wR-52MH5OdjaXW_cCOObGvPTa_wVecHX6
linkProvider IOP Publishing
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=The+Nonlinear+Electronic+Transport+in+Multilayer+Graphene+on+Silicon-on-Insulator+Substrates&rft.jtitle=Chinese+physics+letters&rft.au=Wang%2C+Yu-Bing&rft.au=Yin%2C+Wei-Hong&rft.au=Han%2C+Qin&rft.au=Yang%2C+Xiao-Hong&rft.date=2017-06-01&rft.issn=0256-307X&rft.eissn=1741-3540&rft.volume=34&rft.issue=6&rft.spage=67201&rft_id=info:doi/10.1088%2F0256-307X%2F34%2F6%2F067201&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_0256_307X_34_6_067201
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F84212X%2F84212X.jpg