Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation
High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolat...
Saved in:
| Published in | Chinese physics B Vol. 25; no. 8; pp. 352 - 356 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2016
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/25/8/087306 |
Cover
| Abstract | High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. |
|---|---|
| AbstractList | High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films becomes a limitation to device manufacturing, especially to the breakdown characteristic. In this work, a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up, and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. It is found that all degradation factors, such as trap generation rate time exponent m, Weibull slope beta and percolation factor s, each could be expressed as a function of trap density time exponent alpha . Based on the percolation relation and power law lifetime projection, a temperature related trap generation model is proposed. The validity of this model is confirmed by comparing with experiment results. For other device and material conditions, the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. |
| Author | 徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏 叶甜春 |
| AuthorAffiliation | Key Laboratory of Microelectronics Devices ＆ Integrated Technology, Institute of MicroElectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Author_xml | – sequence: 1 fullname: 徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏 叶甜春 |
| BookMark | eNqFkLtOxDAQRS0EEsvjE5AsKpqwdhxPHFEhxEsCUQC15XVms4bEDrEXxN-TJYiChmqmuGc09-yRbR88EnLE2SlnSs05lEXGmYR5LudqzlQpGGyRWc6kyoQSxTaZ_WZ2yV6ML4wBZ7mYkfSEXY-DSesBM2p8Td9Dm0yDWY09-hp9omkwPW3Qb2IueNqFGlvqPF25ZpW90g6TaWljEtL7h0da47uzSD9cWtHxtA3thEXXraf1gOwsTRvx8Gfuk-ery6eLm-zu4fr24vwus3muUlaBWVaSM4MgjTXMLkzJFfAKxVKCQIDCSiHR8gUUCws5t2BykCUuOK_GevvkZLrbD-FtjTHpzkWLbWs8hnXUXEkpyqoQbIyeTVE7hBgHXGrr0vezY3vXas70xrXeeNQbjzqXWunJ9UjLP3Q_uM4Mn_9yxz_cKvjmzfnmFwSoAGQxtvgCamqQ5g |
| CitedBy_id | crossref_primary_10_1088_1674_1056_ace034 |
| Cites_doi | 10.1109/VLSIT.2012.6242496 10.1109/55.924847 10.1109/RELPHY.2008.4558979 10.1109/16.662800 10.1109/IRPS.2009.5173307 10.1109/RELPHY.2004.1315337 10.1016/0040-6090(90)90098-X 10.1109/IRPS.2015.7112804 10.1109/TDMR.2009.2016954 10.1109/ICMEL.2006.1651019 10.1109/IRPS.2010.5488814 10.1109/IEDM.2009.5424253 10.1109/VLSIT.2008.4588589 10.1109/TED.2002.805606 10.1109/RELPHY.2005.1493113 10.1109/55.974592 10.1109/IRPS.2013.6532105 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION 7U5 8FD H8D L7M |
| DOI | 10.1088/1674-1056/25/8/087306 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库- 镜像站点 CrossRef Solid State and Superconductivity Abstracts Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Aerospace Database Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Aerospace Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation |
| EISSN | 2058-3834 1741-4199 |
| EndPage | 356 |
| ExternalDocumentID | 10_1088_1674_1056_25_8_087306 669665402 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA -SA -S~ AAYXX ACARI ADEQX AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K 7U5 8FD AEINN H8D L7M |
| ID | FETCH-LOGICAL-c228t-96af9510ae65aca0cba718619e3f563e664c535ec1b64bc621c6a2657eb119023 |
| ISSN | 1674-1056 |
| IngestDate | Fri Sep 05 04:35:03 EDT 2025 Tue Jul 01 02:55:17 EDT 2025 Thu Apr 24 22:52:15 EDT 2025 Wed Feb 14 10:16:40 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 8 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c228t-96af9510ae65aca0cba718619e3f563e664c535ec1b64bc621c6a2657eb119023 |
| Notes | Hao Xu, Hong Yang, Yan-Rong Wang, Wen-Wu Wang, Wei-Chun Luo, Lu-Wei Qi, Jun-Feng Li, Chao Zhao, Da-Peng Chen, Tian-Chun Ye（ Key Laboratory of Microelectronics Devices ＆ Integrated Technology, Institute of MicroElectronics Chinese Academy of Sciences, Beijing 100029, China） high-k metal gate, TDDB, percolation theory, kinetic Monte Carlo, trap generation model 11-5639/O4 High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| PQID | 1855379430 |
| PQPubID | 23500 |
| PageCount | 5 |
| ParticipantIDs | proquest_miscellaneous_1855379430 crossref_citationtrail_10_1088_1674_1056_25_8_087306 crossref_primary_10_1088_1674_1056_25_8_087306 chongqing_primary_669665402 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2016-08-01 |
| PublicationDateYYYYMMDD | 2016-08-01 |
| PublicationDate_xml | – month: 08 year: 2016 text: 2016-08-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2016 |
| References | 11 12 13 14 15 16 17 18 1 2 3 4 5 6 7 8 9 10 |
| References_xml | – ident: 3 doi: 10.1109/VLSIT.2012.6242496 – ident: 14 doi: 10.1109/55.924847 – ident: 4 doi: 10.1109/RELPHY.2008.4558979 – ident: 8 doi: 10.1109/16.662800 – ident: 9 doi: 10.1109/IRPS.2009.5173307 – ident: 12 doi: 10.1109/RELPHY.2004.1315337 – ident: 7 doi: 10.1016/0040-6090(90)90098-X – ident: 17 doi: 10.1109/IRPS.2015.7112804 – ident: 11 doi: 10.1109/TDMR.2009.2016954 – ident: 16 doi: 10.1109/ICMEL.2006.1651019 – ident: 15 doi: 10.1109/RELPHY.2004.1315337 – ident: 5 doi: 10.1109/IRPS.2010.5488814 – ident: 2 doi: 10.1109/IEDM.2009.5424253 – ident: 1 doi: 10.1109/VLSIT.2008.4588589 – ident: 10 doi: 10.1109/TED.2002.805606 – ident: 13 doi: 10.1109/RELPHY.2005.1493113 – ident: 18 doi: 10.1109/55.974592 – ident: 6 doi: 10.1109/IRPS.2013.6532105 |
| SSID | ssj0061023 ssib054405859 ssib000804704 |
| Score | 2.055981 |
| Snippet | High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films... High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films... |
| SourceID | proquest crossref chongqing |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 352 |
| SubjectTerms | Breakdown Computer simulation Devices Exponents Gates Mathematical models MOS器件 Percolation Projection 故障模拟器 模拟温度 渗流模型 生成模型 电压依赖性 金属栅 陷阱密度 |
| Title | Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation |
| URI | http://lib.cqvip.com/qk/85823A/201608/669665402.html https://www.proquest.com/docview/1855379430 |
| Volume | 25 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIOP databaseName: IOP Science Platform customDbUrl: eissn: 2058-3834 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0061023 issn: 1674-1056 databaseCode: IOP dateStart: 20080101 isFulltext: true titleUrlDefault: https://iopscience.iop.org/ providerName: IOP Publishing |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3fb9MwELbKEBIviJ-iDJCReJu8pk7iuI8IgQrS2ASb1jfLdl0xbaRjTV72yF_OnX-kKVTAeIkqR75KuS-fzxfffYS8zidzi6cTmbPwkhfWWqbNRLN8ni041j5mFvMdB5_E9KT4OCtng8GP3qmltjH79nprXcn_eBXGwK9YJXsDz3ZGYQB-g3_hCh6G67_52EHQG5oiM_8VALimAYJgSdq2QQmIS5RJdtHTXvkGkxzYp5jtnaOENHgJk2l7B4dfsIgKqCOkZ8E2wCTMW519i0Jf_XAW1bfdysX8yGot4Txr_Zqmlx2rxLz0dBmXSp_ED2Nwj33eMn7qanba9vMSY9GdiktUKqoCSD60DU9cG4qcI6ZkjzglMI3YSulAg5hdSNawggXbYfjahW7WZiPtXxa47tih_-AupUJjCo0pXiqpgplb5DavhEAVjA-HR2k1F9jaAjft6f9TFZiUo25sxMuRHAUz2KPjKzyy7xB5bMY6m0u9j1-O75N7ceNB3wQUPSADVz8kd46C4x6Rto8lCliiv2GJIpboGkvUY4me1dRjiZ5TjyWKWKKAJRqwRBFLtIclusbSY3Ly_t3x2ymLkhzMci4bNhF6gTG5dqLUVmfWaAhuYBPu8kUpcidEYcu8hBffiMJYwcdWaC7KCkICCD15_oTs1MvaPSVUSpND-Dnn2G9oXBmZSwN7a7OAHYuuXDUku92DVJeh9YoSYoJy2RkfkiI9WmVjN3sUVblQf3TykOx305LNv0x4lfymgHjxa5qu3bJdKQh0yxzbK2bPbmp0l9xdvzHPyU5z1boXENs25qUH30_1opwS |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Temperature-+and+voltage-dependent+trap+generation+model+in+high-+k+metal+gate+MOS+device+with+percolation+simulation&rft.jtitle=Chinese+physics+B&rft.au=Xu%2C+Hao&rft.au=Yang%2C+Hong&rft.au=Wang%2C+Yan-Rong&rft.au=Wang%2C+Wen-Wu&rft.date=2016-08-01&rft.issn=1674-1056&rft.volume=25&rft.issue=8&rft.spage=87306&rft_id=info:doi/10.1088%2F1674-1056%2F25%2F8%2F087306&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_1056_25_8_087306 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |