叶甜春, 徐. 杨. 王. 王. 罗. 祁. 李. 赵. 陈. (2016). Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation. Chinese physics B, 25(8), 352-356. https://doi.org/10.1088/1674-1056/25/8/087306
Chicago Style (17th ed.) Citation叶甜春, 徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏. "Temperature- and Voltage-dependent Trap Generation Model in High-k Metal Gate MOS Device with Percolation Simulation." Chinese Physics B 25, no. 8 (2016): 352-356. https://doi.org/10.1088/1674-1056/25/8/087306.
MLA (9th ed.) Citation叶甜春, 徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏. "Temperature- and Voltage-dependent Trap Generation Model in High-k Metal Gate MOS Device with Percolation Simulation." Chinese Physics B, vol. 25, no. 8, 2016, pp. 352-356, https://doi.org/10.1088/1674-1056/25/8/087306.