Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations - 徐昊 杨红 罗维春 徐烨峰 王艳蓉 唐波 王文武 祁路伟 李俊峰 闫江 朱慧珑 赵超 陈大鹏 叶甜春 (Chinese physics B, 2016)
Keywords: Capping; Computer simulation; Dielectric breakdown; Gates; KMC; Monte Carlo methods; NMOSFET; Secondary ion mass spectrometry; Secondary ion mass spectroscopy; TDDB; Time dependence; 时间依赖性; 模拟理论; 电击穿特性; 金属栅; 锡层