叶甜春, 徐. 杨. 罗. 徐. 王. 唐. 王. 祁. 李. 闫. 朱. 赵. 陈. (2016). Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations. Chinese physics B, 25(8), 347-351. https://doi.org/10.1088/1674-1056/25/8/087305
Chicago Style (17th ed.) Citation叶甜春, 徐昊 杨红 罗维春 徐烨峰 王艳蓉 唐波 王文武 祁路伟 李俊峰 闫江 朱慧珑 赵超 陈大鹏. "Study on Influences of TiN Capping Layer on Time-dependent Dielectric Breakdown Characteristic of Ultra-thin EOT High-k Metal Gate NMOSFET with KMC TDDB Simulations." Chinese Physics B 25, no. 8 (2016): 347-351. https://doi.org/10.1088/1674-1056/25/8/087305.
MLA (9th ed.) Citation叶甜春, 徐昊 杨红 罗维春 徐烨峰 王艳蓉 唐波 王文武 祁路伟 李俊峰 闫江 朱慧珑 赵超 陈大鹏. "Study on Influences of TiN Capping Layer on Time-dependent Dielectric Breakdown Characteristic of Ultra-thin EOT High-k Metal Gate NMOSFET with KMC TDDB Simulations." Chinese Physics B, vol. 25, no. 8, 2016, pp. 347-351, https://doi.org/10.1088/1674-1056/25/8/087305.