Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells

Photolumineseenee measurements are carried out to investigate the injection-enhanced annealing behavior of electron radiation-induced defects in a GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells which are irradiated by 1.8 MeV with a fluence of i ~ 1015 cm-2. Minority-carrier injectio...

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Bibliographic Details
Published inChinese physics letters Vol. 33; no. 5; pp. 67 - 70
Main Author 郑勇 易天成 肖鹏飞 唐娟 王荣
Format Journal Article
LanguageEnglish
Published 01.05.2016
Subjects
GaAs
光致
发光分析
太阳电池
电子辐射
辐照缺陷
辐照诱导
退火行为
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/33/5/056102

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Summary:Photolumineseenee measurements are carried out to investigate the injection-enhanced annealing behavior of electron radiation-induced defects in a GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells which are irradiated by 1.8 MeV with a fluence of i ~ 1015 cm-2. Minority-carrier injection under forward bias is observed to enhance the defect annealing in the GaAs middle cell, and the removal rate of the defect is determined with photoluminescenee radiative efficiency recovery. Furthermore, the injection-enhanced defect removal rates obey a simple Arrhenius law. Therefore, the annealing activation energy is acquired and is equal to 0.58eV. Finally, in comparison of the annealing activation energies, the E5 defect is identified as a primary non-radiative recombination center.
Bibliography:11-1959/O4
Yong Zheng, Tian-Cheng Yi, Peng-Fei Xiao, Juan Tang, Rong Wang（1.Key Laboratory of Beam Technology and Materials Modification of Ministry of Education College of Nuclear Science and Technology, Beijing NormM University, Beijing 100875; 2.Beijing Radiation Center, Beijing 100875）
Photolumineseenee measurements are carried out to investigate the injection-enhanced annealing behavior of electron radiation-induced defects in a GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells which are irradiated by 1.8 MeV with a fluence of i ~ 1015 cm-2. Minority-carrier injection under forward bias is observed to enhance the defect annealing in the GaAs middle cell, and the removal rate of the defect is determined with photoluminescenee radiative efficiency recovery. Furthermore, the injection-enhanced defect removal rates obey a simple Arrhenius law. Therefore, the annealing activation energy is acquired and is equal to 0.58eV. Finally, in comparison of the annealing activation energies, the E5 defect is identified as a primary non-radiative recombination center.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/5/056102