王荣, 郑. 易. 肖. 唐. (2016). Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells. Chinese physics letters, 33(5), 67-70. https://doi.org/10.1088/0256-307X/33/5/056102
Chicago Style (17th ed.) Citation王荣, 郑勇 易天成 肖鹏飞 唐娟. "Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells." Chinese Physics Letters 33, no. 5 (2016): 67-70. https://doi.org/10.1088/0256-307X/33/5/056102.
MLA (9th ed.) Citation王荣, 郑勇 易天成 肖鹏飞 唐娟. "Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells." Chinese Physics Letters, vol. 33, no. 5, 2016, pp. 67-70, https://doi.org/10.1088/0256-307X/33/5/056102.