Sensitive properties of In-based compound semiconductor oxide to Cl2 gas

• Published in: Journal of semiconductors Vol. 30; no. 3; pp. 83 - 86
• Main Author: 赵文杰 施云波 修德斌 雷廷平 冯侨华 王立全
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.03.2009
• Subjects: 化合物; 半导体氧化物; 含氯气体; 基础; 扫描电子显微镜; 敏感性; 最低浓度; 特性
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/3/034010

Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive mechanism was also discussed. Adopting constant temperature chemical coprecipitation, the compound oxides such as In-Nb, In-Cd and In-Mg were synthesized, respectively. The products were sintered at 600 ℃ and characterized by the Scanning Electron Microscope （SEM）, showing the grain size almost about 50-60 nm. The test results show that the sensitivities of In-Nb, In-Cd and In-Mg materials under the concentration of 50 × 10^-6 in Cl2 gas are above 100 times, 4 times and 10 times, respectively. The response time of In-Nb, In-Cd and In-Mg materials is about 30, 60 and 30 s, and the recovery time less than 2, 10 and 2 min, respectively. Among them, the In-Nb material was found to have a relatively high conductivity and ideal sensitivity to Cl2 gas, which showed rather good selectivity and stability, and could detect the minimum concentration of 0.5 × 10^-6 with the sensitivity of 2.2, and the upper limit concentration of 500 × 10^-6. The power loss of the device is around 220 mW under the heating voltage of 3 V.