Automation of optimal metal density filling for deep sub micron technology designs

The locally adopted technique of Chemical-mechanical polishing (CMP) along with various other steps taken in design for manufacturing procedures employed for the fabrication of nano ICs, results in adverse impact on interconnecting wire parameters as well as device features. In order to enhance the...

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Published inMaterials today : proceedings Vol. 74; pp. 207 - 212
Main Authors Khursheed, Afreen, Khare, Kavita, Haque, Fozia Z.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2023
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ISSN2214-7853
2214-7853
DOI10.1016/j.matpr.2022.08.050

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Abstract The locally adopted technique of Chemical-mechanical polishing (CMP) along with various other steps taken in design for manufacturing procedures employed for the fabrication of nano ICs, results in adverse impact on interconnecting wire parameters as well as device features. In order to enhance the manufacturability yield, performance predictability and also for getting the uniform chip layout a propos to prescribed density criteria; dummy fill insertion into layout is a mandatory step of contemporary manufacturing process. Full chip dummy fill is an iterative process which is time consuming and exponentially increases size of GDS. This paper discusses an algorithm which suggests a more sophisticated dummy-fill technique such that it optimizes the total number of metal fill by keeping a tradeoff between the fill requirement and need of design. The proposed algorithm will iterate automatically till a target density is reached with marginal increase to the size of the GDS. MENTOR GRAPHICS SVRF Calibre commands are used to develop the algorithm. PERL scripting is used to run the job automatically. The simulated experimental results points out that the proposed method renders a more balanced metal density distribution while using lesser dummy metal features. Besides this it shows an acceptable timing overhead.
AbstractList The locally adopted technique of Chemical-mechanical polishing (CMP) along with various other steps taken in design for manufacturing procedures employed for the fabrication of nano ICs, results in adverse impact on interconnecting wire parameters as well as device features. In order to enhance the manufacturability yield, performance predictability and also for getting the uniform chip layout a propos to prescribed density criteria; dummy fill insertion into layout is a mandatory step of contemporary manufacturing process. Full chip dummy fill is an iterative process which is time consuming and exponentially increases size of GDS. This paper discusses an algorithm which suggests a more sophisticated dummy-fill technique such that it optimizes the total number of metal fill by keeping a tradeoff between the fill requirement and need of design. The proposed algorithm will iterate automatically till a target density is reached with marginal increase to the size of the GDS. MENTOR GRAPHICS SVRF Calibre commands are used to develop the algorithm. PERL scripting is used to run the job automatically. The simulated experimental results points out that the proposed method renders a more balanced metal density distribution while using lesser dummy metal features. Besides this it shows an acceptable timing overhead.
Author Haque, Fozia Z.
Khursheed, Afreen
Khare, Kavita
Author_xml – sequence: 1
  givenname: Afreen
  surname: Khursheed
  fullname: Khursheed, Afreen
  email: afreen.khursheed@gmail.com
  organization: Dept of ECE, IIIT Bhopal, India
– sequence: 2
  givenname: Kavita
  surname: Khare
  fullname: Khare, Kavita
  organization: Dept. of ECE, MANIT Bhopal, India
– sequence: 3
  givenname: Fozia Z.
  surname: Haque
  fullname: Haque, Fozia Z.
  organization: Dept. of Physics, MANIT Bhopal, India
BookMark eNqFkM9KAzEQh4NUsNY-gZd9gV0n2W529-ChFLVCQRA9h2z-1JTdZElSoW9v2noQD3rJhBm-YX7fNZpYZxVCtxgKDJje7YqBx9EXBAgpoCmgggs0JQQv8rqpysmP_xWah7ADAFxRaDCdotflPrrEG2czpzM3RjPwPhtUTK9UNph4yLTpe2O3mXY-9dSYhX2XDUb4BEUlPqzr3faQRsFsbbhBl5r3Qc2_6wy9Pz68rdb55uXpebXc5ILgJuaECk5lRXgrsNQVrjtOayGgXXQSGi5BUtlxKSVWHedci07jErCu2q6ioqzLGWrPe9MdIXilmTDxlCR6bnqGgR39sB07-WFHPwwalvwktvzFjj4F94d_qPszpVKsT6M8C8IoK5Q0XonIpDN_8l_Lq4V-
CitedBy_id crossref_primary_10_1038_s44287_024_00038_5
Cites_doi 10.1166/jno.2018.2507
10.1109/16.661228
10.1109/TVLSI.2008.2010830
10.1109/ASMC.2002.1001618
10.1201/9781003104193
10.1007/s10825-018-1271-0
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10.1108/CW-06-2019-0060
ContentType Journal Article
Copyright 2022
Copyright_xml – notice: 2022
DBID AAYXX
CITATION
DOI 10.1016/j.matpr.2022.08.050
DatabaseName CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
EISSN 2214-7853
EndPage 212
ExternalDocumentID 10_1016_j_matpr_2022_08_050
S2214785322052051
GroupedDBID --M
.~1
0R~
1~.
4.4
457
4G.
5VS
7-5
8P~
AABXZ
AACTN
AAEDT
AAEDW
AAIAV
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAXUO
ABMAC
ABXDB
ABYKQ
ACDAQ
ACGFS
ACRLP
ADBBV
ADEZE
AEBSH
AEZYN
AFKWA
AFRZQ
AFTJW
AGHFR
AGUBO
AIEXJ
AIKHN
AITUG
AJBFU
AJOXV
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
AXJTR
BKOJK
BLXMC
EBS
EFJIC
EFLBG
EJD
FDB
FIRID
FYGXN
GBLVA
HZ~
KOM
M41
NCXOZ
O9-
OAUVE
P-8
P-9
PC.
ROL
SPC
SPCBC
SSM
SSZ
T5K
~G-
AATTM
AAXKI
AAYWO
AAYXX
ABJNI
ACLOT
ACVFH
ADCNI
ADVLN
AEIPS
AEUPX
AFJKZ
AFPUW
AIGII
AIIUN
AKBMS
AKRWK
AKYEP
ANKPU
APXCP
CITATION
EFKBS
ID FETCH-LOGICAL-c218t-26ca6d52a9c1df517ba67cc094bd08ad0d6dbaddd1ebaaafcbf1301f59b56c373
IEDL.DBID .~1
ISSN 2214-7853
IngestDate Thu Apr 24 23:12:51 EDT 2025
Wed Oct 01 03:37:30 EDT 2025
Fri Feb 23 02:38:54 EST 2024
IsPeerReviewed true
IsScholarly true
Keywords White-spac
Dishing
Damascene
Dummy fill
CMP
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c218t-26ca6d52a9c1df517ba67cc094bd08ad0d6dbaddd1ebaaafcbf1301f59b56c373
PageCount 6
ParticipantIDs crossref_citationtrail_10_1016_j_matpr_2022_08_050
crossref_primary_10_1016_j_matpr_2022_08_050
elsevier_sciencedirect_doi_10_1016_j_matpr_2022_08_050
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2023
2023-00-00
PublicationDateYYYYMMDD 2023-01-01
PublicationDate_xml – year: 2023
  text: 2023
PublicationDecade 2020
PublicationTitle Materials today : proceedings
PublicationYear 2023
Publisher Elsevier Ltd
Publisher_xml – name: Elsevier Ltd
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SSID ssj0001560816
Score 2.2082357
Snippet The locally adopted technique of Chemical-mechanical polishing (CMP) along with various other steps taken in design for manufacturing procedures employed for...
SourceID crossref
elsevier
SourceType Enrichment Source
Index Database
Publisher
StartPage 207
SubjectTerms CMP
Damascene
Dishing
Dummy fill
White-spac
Title Automation of optimal metal density filling for deep sub micron technology designs
URI https://dx.doi.org/10.1016/j.matpr.2022.08.050
Volume 74
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVESC
  databaseName: Baden-Württemberg Complete Freedom Collection (Elsevier)
  customDbUrl:
  eissn: 2214-7853
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0001560816
  issn: 2214-7853
  databaseCode: GBLVA
  dateStart: 20110101
  isFulltext: true
  titleUrlDefault: https://www.sciencedirect.com
  providerName: Elsevier
– providerCode: PRVESC
  databaseName: Elsevier ScienceDirect Complete Freedom Collection
  customDbUrl:
  eissn: 2214-7853
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0001560816
  issn: 2214-7853
  databaseCode: ACRLP
  dateStart: 20190101
  isFulltext: true
  titleUrlDefault: https://www.sciencedirect.com
  providerName: Elsevier
– providerCode: PRVESC
  databaseName: Elsevier SD Freedom Collection Journals [SCFCJ]
  customDbUrl:
  eissn: 2214-7853
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0001560816
  issn: 2214-7853
  databaseCode: AIKHN
  dateStart: 20190101
  isFulltext: true
  titleUrlDefault: https://www.sciencedirect.com
  providerName: Elsevier
– providerCode: PRVESC
  databaseName: ScienceDirect (Elsevier)
  customDbUrl:
  eissn: 2214-7853
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0001560816
  issn: 2214-7853
  databaseCode: .~1
  dateStart: 20140101
  isFulltext: true
  titleUrlDefault: https://www.sciencedirect.com
  providerName: Elsevier
– providerCode: PRVLSH
  databaseName: Elsevier Journals
  customDbUrl:
  mediaType: online
  eissn: 2214-7853
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0001560816
  issn: 2214-7853
  databaseCode: AKRWK
  dateStart: 20140101
  isFulltext: true
  providerName: Library Specific Holdings
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEF6KXryIomJ9lD14NDbZJJvmWIqlKvagFnoL-4SKTYJND1787c5skqogPQg5bWYgTJL5Zmdn5iPkyo8UM1yHHrMCNihhIr1UstSLJDNW2VAYjSe6j1M-mUX383jeIaO2FwbLKhvfX_t0562blX5jzX65WPSfGVLsANpgqyhcroM9SpDF4OYz-M6zAKQPHAMqynuo0A4fcmVeEBeWOBeUMTfKE_vv_wKoH6AzPiD7TbRIh_UDHZKOyY_I03BdFXXHIS0sLeCnX4LQ0kAcTTUWpFcf1C7csG0KMSmsmZKu1pIusfoup9UmnQ63sIBjdUxm49uX0cRrqBE8BZhceYwrwXXMRKoCbeMgkYInSsFeTWp_ILSPPFHgunRgpBDCKmkBrAIbpzLmKkzCE7KTF7k5JVRwX8Wpr0yU2ogbPEj0faVdulgCeHcJa-2RqWZuONJXvGVtgdhr5oyYoREzJLWM_S653iiV9diM7eK8NXT26-1n4Ni3KZ79V_Gc7CFxfJ1MuSA71fvaXEJ4Ucme-356ZHd49zCZfgHdqdF8
linkProvider Elsevier
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEF5KPehFFBXrcw8ejU02yaY5lmKp2vagLfQW9gkV2wSbHrz4253JoypID0JOmx0Ik2S-mdmZ-Qi5cQPFDNe-w6yAAMWPpBNLFjuBZMYq6wuj8UR3NOaDafA4C2cN0qt7YbCssrL9pU0vrHW10q602c7m8_YLQ4odQBtsFYULQqCdIGQRRmB3n953ogUwvVNQoKKAgxL19KGizgscwwwHgzJWzPLEBvy_EOoH6vQPyH7lLtJu-USHpGGWR-S5u87TsuWQppam8NcvYNPCgCNNNVak5x_Uzotp2xScUlgzGV2tJV1g-d2S5pt8OtzCCo7VMZn27ye9gVNxIzgKQDl3GFeC65CJWHnahl4kBY-UgmBNarcjtItEUWC7tGekEMIqaQGtPBvGMuTKj_wT0lymS3NKqOCuCmNXmSC2ATd4kui6Shf5Ygno3SKs1keiqsHhyF_xltQVYq9JocQElZggq2XotsjtRigr52Zs385rRSe_Xn8Cln2b4Nl_Ba_J7mAyGibDh_HTOdlDFvkys3JBmvn72lyCr5HLq-Jb-gLifdMR
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Automation+of+optimal+metal+density+filling+for+deep+sub+micron+technology+designs&rft.jtitle=Materials+today+%3A+proceedings&rft.au=Khursheed%2C+Afreen&rft.au=Khare%2C+Kavita&rft.au=Haque%2C+Fozia+Z.&rft.date=2023&rft.pub=Elsevier+Ltd&rft.issn=2214-7853&rft.eissn=2214-7853&rft.volume=74&rft.spage=207&rft.epage=212&rft_id=info:doi/10.1016%2Fj.matpr.2022.08.050&rft.externalDocID=S2214785322052051
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2214-7853&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2214-7853&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2214-7853&client=summon