Fabrication and Characterization of AlN films Containing Various Amounts of Co Content

A new approach is described for preparing AlN thin films containing various amounts of Co content by using a two-facing targets type sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were i...

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Bibliographic Details
Published inKorean Journal of Metals and Materials Vol. 48; no. 3; pp. 268 - 275
Main Authors Bae, Chang-Hwan, Han, Seung-Oh, Han, Chang-Suk
Format Journal Article
LanguageEnglish
Published 대한금속·재료학회 01.03.2010
Subjects
재료공학
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ISSN1738-8228
2288-8241
DOI10.3365/KJMM.2010.48.03.268

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Summary:A new approach is described for preparing AlN thin films containing various amounts of Co content by using a two-facing targets type sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. A small saturation magnetization (4πMs=0.52~0.85 kG) was observed irrespective of Co content in the asdeposited films. It was found that annealing conditions can control physical properties as well as the microstructure of the films. A high saturation magnetization (3.7 kG) and resistivity of 2200 μΩ-cm was obtained for AlN films containing 25 at.% Co. KCI Citation Count: 5
Bibliography:G704-000085.2010.48.3.003
ISSN:1738-8228
2288-8241
DOI:10.3365/KJMM.2010.48.03.268