Improved thermoelectric performance in p-type Bi0.48Sb1.52Te3 bulk material by adding MnSb2Se4

Bismuth telluride(Bi2Te3) based alloys, such as p-type Bi0.5Sb1.5Te3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi0.48Sb1.52Te3 bulk materials with MnSb2Se4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process....

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Published in中国物理B:英文版 no. 1; pp. 407 - 413
Main Author 曹丙垒 简基康 葛炳辉 李善明 王浩 刘骄 赵怀周
Format Journal Article
LanguageEnglish
Published 2017
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/1/017202

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Summary:Bismuth telluride(Bi2Te3) based alloys, such as p-type Bi0.5Sb1.5Te3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi0.48Sb1.52Te3 bulk materials with MnSb2Se4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process. The addition of MnSb2Se4 to Bi0.48Sb1.52Te3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb2Se4 and Bi0.48Sb1.52Te3 were observed in the Bi0.48Sb1.52Te3 matrix. The nanoparticles in the semi-coherent second phase of MnSb2Se4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi0.48Sb1.52Te3 by adding an Mn0.8Cu0.2Sb2Se4(2mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to 40% improvement over its Bi0.48Sb1.52Te3 counterpart. Such enhancement of the thermoelectric(TE) performance of p-type Bi2Te3 based materials is believed to be advantageous for practical applications.
Bibliography:11-5639/O4
Binglei Cao;Jikang Jian;Binghui Ge;Shanming Li;Hao Wang;Jiao Liu;Huaizhou Zhao;Physics and Optoelectronics Engineering College,Guangdong University of Technology;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/1/017202