Remanence Enhancement Effect in Ni0.7Zn0.3Fe2O4/Co0.8Fe2.2O4 Ferrite Multilayer Film

Ni0.7Zn0.3Fe2O4/Co0.8Fe2.2O4（NZFO/CFO） multilayer films are fabricated on Si（lO0） substrates by the chemical solution deposition method. The mierostructure and magnetic properties are systematically investigated. The results of field-emission scanning electronic microscopy show that the grain size o...

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Bibliographic Details
Published in中国物理快报：英文版 Vol. 33; no. 11; pp. 104 - 107
Main Author 范程华 王群京 訾振发
Format Journal Article
LanguageEnglish
Published 01.11.2016
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/33/11/117304

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Summary:Ni0.7Zn0.3Fe2O4/Co0.8Fe2.2O4（NZFO/CFO） multilayer films are fabricated on Si（lO0） substrates by the chemical solution deposition method. The mierostructure and magnetic properties are systematically investigated. The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 30Ohm. The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films, which is in favor of the design and fabrication of modern electronic devices.
Bibliography:Cheng-Hua Fan1,2, Qun-Jing Wang1, Zhen-Fa Zi2 （1School of Electrical Engineering and Automation, Anhui University, Hefei 230601;2School of Electrical and Information Engineering, Hefei Normal University, Hefei 230601）
11-1959/O4
Ni0.7Zn0.3Fe2O4/Co0.8Fe2.2O4（NZFO/CFO） multilayer films are fabricated on Si（lO0） substrates by the chemical solution deposition method. The mierostructure and magnetic properties are systematically investigated. The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 30Ohm. The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films, which is in favor of the design and fabrication of modern electronic devices.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/11/117304