张波, 李. 邓. 刘. 赵. 李. 陈. (2015). Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation. 半导体学报：英文版, 9, 58-61. https://doi.org/10.1088/1674-4926/36/9/094003
Chicago Style (17th ed.) Citation张波, 李妍月 邓小川 刘云峰 赵艳黎 李诚瞻 陈茜茜. "Effect of Post Oxidation Annealing in Nitric Oxide on Interface Properties of 4H-SiC/SiO2 After High Temperature Oxidation." 半导体学报：英文版 9 (2015): 58-61. https://doi.org/10.1088/1674-4926/36/9/094003.
MLA (9th ed.) Citation张波, 李妍月 邓小川 刘云峰 赵艳黎 李诚瞻 陈茜茜. "Effect of Post Oxidation Annealing in Nitric Oxide on Interface Properties of 4H-SiC/SiO2 After High Temperature Oxidation." 半导体学报：英文版, 9, 2015, pp. 58-61, https://doi.org/10.1088/1674-4926/36/9/094003.
Warning: These citations may not always be 100% accurate.