Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application

Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization tem...

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Published in中国物理快报：英文版 no. 7; pp. 168 - 170
Main Author 朱月琴 张中华 宋三年 谢华清 宋志棠 沈兰兰 李乐 吴良才 刘波
Format Journal Article
LanguageEnglish
Published 01.07.2015
Subjects
化学表征
应用
掺杂
热稳定性
相变存储器
结晶温度
随机存取存储器
Online AccessGet full text
ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/7/077302

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Abstract Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2 Tes. In addition, Ge0.11Sb2 Te3 presents extremely rapid reverse switching speed （lOns）, and up to 105 programming cycles are obtained with stable set and reset resistances.
AbstractList Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2 Tes. In addition, Ge0.11Sb2 Te3 presents extremely rapid reverse switching speed （lOns）, and up to 105 programming cycles are obtained with stable set and reset resistances.
Author 朱月琴 张中华 宋三年 谢华清 宋志棠 沈兰兰 李乐 吴良才 刘波
AuthorAffiliation School of Environmental and Materials Engineering, Shanghai Second Polytechnic University, Shanghai 201209 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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Notes 11-1959/O4
Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2 Tes. In addition, Ge0.11Sb2 Te3 presents extremely rapid reverse switching speed （lOns）, and up to 105 programming cycles are obtained with stable set and reset resistances.
ZHU Yue-Qin, ZHANG Zhong-Hua, SONG San-Nian, XIE Hua-Qing, SONG Zhi-Tang, SHEN Lan-Lan, LI Le, WU Liang-Cai, LIU Bo （ 1School of Environmental and Materials Engineering, Shanghai Second Polytechnic University, Shanghai 201209 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050）
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Snippet Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3....
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StartPage 168
SubjectTerms 化学表征
应用
掺杂
热稳定性
相变存储器
结晶温度
随机存取存储器
Title Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application
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