武利翻, 关. 吕. 郭. 张. 张. (2015). Interfacial and electrical characteristics of a HfO2/n–InAlAs MOS-capacitor with different dielectric thicknesses. 中国物理B：英文版, 12, 460-464. https://doi.org/10.1088/1674-1056/24/12/126701
Chicago Style (17th ed.) Citation武利翻, 关赫 吕红亮 郭辉 张义门 张玉明. "Interfacial and Electrical Characteristics of a HfO2/n–InAlAs MOS-capacitor with Different Dielectric Thicknesses." 中国物理B：英文版 12 (2015): 460-464. https://doi.org/10.1088/1674-1056/24/12/126701.
MLA (9th ed.) Citation武利翻, 关赫 吕红亮 郭辉 张义门 张玉明. "Interfacial and Electrical Characteristics of a HfO2/n–InAlAs MOS-capacitor with Different Dielectric Thicknesses." 中国物理B：英文版, 12, 2015, pp. 460-464, https://doi.org/10.1088/1674-1056/24/12/126701.
Warning: These citations may not always be 100% accurate.