Effect of nano-SiO2 films on the electron radiation induced conductivity of polyimide

The radiation induced conductivity （RIC） behaviors in nano-SiO2 deposited polyimide （PI） were investigated using the in situ measurement technique. The results indicate that, by comparison with the case of virgin polyimide, the RIC in nano-SiO2/polyimide shows low steady state values. Moreover, the...

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Published in中国物理B：英文版 no. 7; pp. 383 - 386
Main Author 岳龙 吴宜勇 孙承月 石亚平 肖景东 何世禹
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
SiO2薄膜
导电性
测量技术
电子辐射
界面势垒
纳米SiO2
聚酰亚胺
输运机制
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/22/7/076103

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Summary:The radiation induced conductivity （RIC） behaviors in nano-SiO2 deposited polyimide （PI） were investigated using the in situ measurement technique. The results indicate that, by comparison with the case of virgin polyimide, the RIC in nano-SiO2/polyimide shows low steady state values. Moreover, the steady state RIC is a power function of the dose rate with a power index of 0.659, lower than that of 0.76 in the virgin polyimide. The interfacial barrier and trapping effects are the main reasons for the change. Meanwhile, both of the interfacial effects also result in a unipolar carrier transportation mechanism in nano-SiO2 deposited PI from the dipolar one in the virgin PI. The mechanisms of the RIC behaviors are discussed in the paper.
Bibliography:The radiation induced conductivity （RIC） behaviors in nano-SiO2 deposited polyimide （PI） were investigated using the in situ measurement technique. The results indicate that, by comparison with the case of virgin polyimide, the RIC in nano-SiO2/polyimide shows low steady state values. Moreover, the steady state RIC is a power function of the dose rate with a power index of 0.659, lower than that of 0.76 in the virgin polyimide. The interfacial barrier and trapping effects are the main reasons for the change. Meanwhile, both of the interfacial effects also result in a unipolar carrier transportation mechanism in nano-SiO2 deposited PI from the dipolar one in the virgin PI. The mechanisms of the RIC behaviors are discussed in the paper.
Yue Long, Wu Yi-Yong, Sun Cheng-Yue, Shi Ya-Ping, Xiao Jing-Dong,He Shi-Yu School of Materials Science ＆ Engineering, Harbin Institute of Technology, Harbin 150001, China
11-5639/O4
polyimide;radiation induced conductivity;Nano-SiO2
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/7/076103