Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer
The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer lead...
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| Published in | 半导体学报：英文版 no. 6; pp. 38 - 41 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/35/6/064004 |
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| Abstract | The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/（V.s） and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer. |
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| AbstractList | The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/（V.s） and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer. |
| Author | 樊建锋 程晓曼 白潇 郑灵程 蒋晶 吴峰 |
| AuthorAffiliation | School of Science, Tianjin University of Technology, Tianjin 300384, China Institute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education, Tianjin key Laboratory of Photoelectric Materials and Device, Tianjin 300384, China |
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| DocumentTitleAlternate | Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer |
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| Notes | The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/（V.s） and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer. 11-5781/TN Fan Jianfeng, Cheng Xiaoman, Bai Xiao, Zheng Lingcheng, Jiang Jing, Wu Feng 1.School of Science, Tianjin University of Technology, Tianjin 300384, China 2 Institute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin key Laboratory of Photoelectric Materials and Device, Tianjin 300384, China organic field effect transistors; contact resistance; WO3 buffer layer |
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| PublicationTitle | 半导体学报：英文版 |
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| Snippet | The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain... |
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| StartPage | 38 |
| SubjectTerms | 三氧化钨 器件性能 场效应迁移率 性能增强 有机场效应晶体管 缓冲层 苯系 过渡金属氧化物 |
| Title | Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer |
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