王占国, 王. 杨. 王. 刘. 李. 李. 金. 刘. 朱. (2013). Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells. 中国物理B：英文版, 7, 459-462. https://doi.org/10.1088/1674-1056/22/7/077305
Chicago Style (17th ed.) Citation王占国, 王建霞 杨少延 王俊 刘贵鹏 李志伟 李辉杰 金东东 刘祥林 朱勤生. "Electron Mobility Limited by Surface and Interface Roughness Scattering in AlxGa1-xN/GaN Quantum Wells." 中国物理B：英文版 7 (2013): 459-462. https://doi.org/10.1088/1674-1056/22/7/077305.
MLA (9th ed.) Citation王占国, 王建霞 杨少延 王俊 刘贵鹏 李志伟 李辉杰 金东东 刘祥林 朱勤生. "Electron Mobility Limited by Surface and Interface Roughness Scattering in AlxGa1-xN/GaN Quantum Wells." 中国物理B：英文版, 7, 2013, pp. 459-462, https://doi.org/10.1088/1674-1056/22/7/077305.
Warning: These citations may not always be 100% accurate.