Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film

Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （C...

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Published in半导体学报：英文版 no. 6; pp. 10 - 13
Main Author 段波 周建伟 刘玉岭 王辰伟 张玉峰
Format Journal Article
LanguageEnglish
Published 01.06.2014
Subjects
TiO2薄膜
二氧化钛
光学系统
化学机械抛光
工作压力
抗反射涂层
消光系数
表面粗糙度
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ISSN1674-4926
DOI10.1088/1674-4926/35/6/063003

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Summary:Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.
Bibliography:Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.
Duan Bo, Zhou Jianwei, Liu Yuling, Wang Chenwei,Zhang Yufeng Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
11-5781/TN
TiO2 thin film; surface roughness; CMP; process parameters
ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/063003