Resistive switching characteristics of Ti/ZrO2/Pt RRAM device

In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high...

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Bibliographic Details
Published in中国物理B：英文版 no. 11; pp. 507 - 511
Main Author 雷晓艺 刘红侠 高海霞 杨哈妮 王国明 龙世兵 马晓华 刘明
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
传导机制
器件
导通模式
开关特性
氧化锆
电阻式
空间电荷限制电流
铂
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/23/11/117305

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Summary:In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.
Bibliography:Lei Xiao-Yi, Liu Hong-Xia, Gao Hai-Xia, Yang Ha-Ni, Wang Guo-Ming, Long Shi-Bing, Ma Xiao-Hua, and Liu Ming（ a） Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇ an 710071 b） School of Advanced Materials and Nanotechnology, Xidian University, Xi＇an 710071, China c ）Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China d） Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384 0071, China China
11-5639/O4
resistive random access memory （RRAM）, resistive switching （RS）, conductive filament （CF）,compliance current
In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/23/11/117305