All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS 2 Field‐Effect Transistors
Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect‐free interfaces are of vital importance for building nanoscale harsh‐environment‐resistant devices. However, current nanoscale devices are subject...
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| Published in | Advanced materials (Weinheim) Vol. 35; no. 18; p. e2210735 |
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| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Germany
01.05.2023
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0935-9648 1521-4095 |
| DOI | 10.1002/adma.202210735 |
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| Abstract | Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect‐free interfaces are of vital importance for building nanoscale harsh‐environment‐resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode–channel interfaces. Here, harsh‐environment‐resistant MoS 2 transistors are developed by engineering electrode–channel interfaces with an all‐transfer of van der Waals electrodes. The delivered defect‐free, graphene‐buffered electrodes keep the electrode–channel interfaces intact and robust. As a result, the as‐fabricated MoS 2 devices have reduced Schottky barrier heights, leading to a very large on‐state current and high carrier mobility. More importantly, the defect‐free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS 2 and the intercalation of water molecules at the electrode–MoS 2 interfaces. This enables high resistances of MoS 2 devices with all‐transfer electrodes to various harsh environments, including humid, oxidizing, and high‐temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode–channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh‐environment‐resistant devices. |
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| AbstractList | Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect‐free interfaces are of vital importance for building nanoscale harsh‐environment‐resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode–channel interfaces. Here, harsh‐environment‐resistant MoS 2 transistors are developed by engineering electrode–channel interfaces with an all‐transfer of van der Waals electrodes. The delivered defect‐free, graphene‐buffered electrodes keep the electrode–channel interfaces intact and robust. As a result, the as‐fabricated MoS 2 devices have reduced Schottky barrier heights, leading to a very large on‐state current and high carrier mobility. More importantly, the defect‐free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS 2 and the intercalation of water molecules at the electrode–MoS 2 interfaces. This enables high resistances of MoS 2 devices with all‐transfer electrodes to various harsh environments, including humid, oxidizing, and high‐temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode–channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh‐environment‐resistant devices. Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect-free interfaces are of vital importance for building nanoscale harsh-environment-resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode-channel interfaces. Here, harsh-environment-resistant MoS transistors are developed by engineering electrode-channel interfaces with an all-transfer of van der Waals electrodes. The delivered defect-free, graphene-buffered electrodes keep the electrode-channel interfaces intact and robust. As a result, the as-fabricated MoS devices have reduced Schottky barrier heights, leading to a very large on-state current and high carrier mobility. More importantly, the defect-free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS and the intercalation of water molecules at the electrode-MoS interfaces. This enables high resistances of MoS devices with all-transfer electrodes to various harsh environments, including humid, oxidizing, and high-temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode-channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh-environment-resistant devices. |
| Author | Wang, Bolun Shi, Run Liu, Yiqun Wang, Enze Peng, Ruixuan Xin, Zeqin Zhang, Zhibin Liu, Kaihui Liu, Kai Wu, Yonghuang Guo, Jing |
| Author_xml | – sequence: 1 givenname: Yonghuang surname: Wu fullname: Wu, Yonghuang organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China – sequence: 2 givenname: Zeqin surname: Xin fullname: Xin, Zeqin organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China – sequence: 3 givenname: Zhibin surname: Zhang fullname: Zhang, Zhibin organization: State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano‐optoelectronics School of Physics Peking University Beijing 100871 China – sequence: 4 givenname: Bolun surname: Wang fullname: Wang, Bolun organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China – sequence: 5 givenname: Ruixuan surname: Peng fullname: Peng, Ruixuan organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China – sequence: 6 givenname: Enze surname: Wang fullname: Wang, Enze organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China – sequence: 7 givenname: Run surname: Shi fullname: Shi, Run organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China – sequence: 8 givenname: Yiqun surname: Liu fullname: Liu, Yiqun organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China – sequence: 9 givenname: Jing surname: Guo fullname: Guo, Jing organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China – sequence: 10 givenname: Kaihui surname: Liu fullname: Liu, Kaihui organization: State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano‐optoelectronics School of Physics Peking University Beijing 100871 China – sequence: 11 givenname: Kai orcidid: 0000-0002-0638-5189 surname: Liu fullname: Liu, Kai organization: State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China |
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| Keywords | molybdenum disulfide field-effect transistors harsh-environment resistance van der Waals electrodes interface engineering |
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