CMOS Device and Circuit Degradations Subject to \hbox Gate Breakdown and Transient Charge-Trapping Effect - Yu, Chuanzhao; Yuan, J. S. (IEEE transactions on electron devices, 2007)
Keywords: CMOS oscillators; dielectric breakdown (BD); fast transient charge effect; Hafnium compounds; High-k dielectric materials; leakage current; Leakage currents; Logic gates; low-noise amplifier (LNA); Noise measurement; reliability; Stress; Transistors