CMOS Device and Circuit Degradations Subject to \hbox Gate Breakdown and Transient Charge-Trapping Effect
The gate leakage current of HfO 2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring...
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| Published in | IEEE transactions on electron devices Vol. 54; no. 1; pp. 59 - 67 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.01.2007
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0018-9383 |
| DOI | 10.1109/TED.2006.887517 |
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| Abstract | The gate leakage current of HfO 2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier |
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| AbstractList | The gate leakage current of HfO 2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier |
| Author | Yu, Chuanzhao Yuan, J. S. |
| Author_xml | – sequence: 1 givenname: Chuanzhao surname: Yu fullname: Yu, Chuanzhao organization: Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL – sequence: 2 givenname: J. S. surname: Yuan fullname: Yuan, J. S. |
| BookMark | eNp9kD1PwzAQhj0UibYwM7D4D6S149hxRkhLQSpiaNmQorNjty7FqRyXj39P2iIGBqbTvdLznu4ZoJ5vvEHoipIRpaQYL6eTUUqIGEmZc5r3UJ8QKpOCSXaOBm276VaRZWkfufLxaYEn5t1pg8HXuHRB713solWAGqJrfIsXe7UxOuLY4Je1aj7xDKLBt8HAa918-CO4DOBbZ3zE5RrCyiRdsNs5v8JTazv4Ap1Z2Lbm8mcO0fPddFneJ_On2UN5M080JYInuWIgLAWaCq5prmpItUxVqnhRCEqU5QWxXKacCqYK4MTWAjLQtZZMaiXYEI1PvTo0bRuMrXbBvUH4qiipDnaqzk51sFOd7HQE_0NoF4-fxwBu-w93feKcMeb3SkZYkVPOvgF9SXW8 |
| CODEN | IETDAI |
| CitedBy_id | crossref_primary_10_1016_j_microrel_2011_03_027 crossref_primary_10_1109_TED_2010_2093141 crossref_primary_10_1109_TED_2007_911092 crossref_primary_10_1016_j_microrel_2010_02_009 crossref_primary_10_1109_TED_2008_2003031 crossref_primary_10_1088_0022_3727_43_16_165302 crossref_primary_10_1109_TDMR_2010_2048032 crossref_primary_10_1109_TDMR_2011_2160350 crossref_primary_10_1109_TED_2008_928024 |
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| ContentType | Journal Article |
| DBID | 97E RIA RIE AAYXX CITATION |
| DOI | 10.1109/TED.2006.887517 |
| DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005–Present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Xplore (NTUSG) CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EndPage | 67 |
| ExternalDocumentID | 10_1109_TED_2006_887517 4039715 |
| Genre | orig-research |
| GroupedDBID | -~X .DC 0R~ 29I 3EH 4.4 5GY 5VS 6IK 97E AAJGR AARMG AASAJ AAWTH ABAZT ABQJQ ABVLG ACGFO ACGFS ACIWK ACKIV ACNCT AENEX AETIX AGQYO AGSQL AHBIQ AI. AIBXA AKJIK AKQYR ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RNS TAE TN5 VH1 VJK VOH AAYXX CITATION |
| ID | FETCH-LOGICAL-c1065-7b3a6f1a1265c17bda2c82b2b599610bf590f5825163b9a50fd6a4acdc838cb63 |
| IEDL.DBID | RIE |
| ISSN | 0018-9383 |
| IngestDate | Wed Oct 01 04:50:43 EDT 2025 Thu Apr 24 22:58:00 EDT 2025 Wed Aug 27 06:27:15 EDT 2025 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Language | English |
| License | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c1065-7b3a6f1a1265c17bda2c82b2b599610bf590f5825163b9a50fd6a4acdc838cb63 |
| PageCount | 9 |
| ParticipantIDs | ieee_primary_4039715 crossref_citationtrail_10_1109_TED_2006_887517 crossref_primary_10_1109_TED_2006_887517 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2007-Jan. 2007-01-00 |
| PublicationDateYYYYMMDD | 2007-01-01 |
| PublicationDate_xml | – month: 01 year: 2007 text: 2007-Jan. |
| PublicationDecade | 2000 |
| PublicationTitle | IEEE transactions on electron devices |
| PublicationTitleAbbrev | TED |
| PublicationYear | 2007 |
| Publisher | IEEE |
| Publisher_xml | – name: IEEE |
| References | ref35 ref13 ref34 kerber (ref12) 2003 ref15 ref31 ref30 ref11 ref32 ref10 ref2 ref1 ref16 ref19 ref18 ref24 young (ref33) 2005 ref23 ref26 ref25 ref20 degraeve (ref6) 2001 ref21 ref28 ref27 ref29 ref8 ref7 ref9 roussel (ref22) 2001 ref4 torii (ref17) 2004 ref3 ref5 lee (ref14) 2004 |
| References_xml | – start-page: 386 year: 2001 ident: ref22 article-title: accurate and robust noise-based trigger algorithm for soft breakdown detection in ultra thin oxides publication-title: Proc Int Reliab Phys Symp Tech Dig – ident: ref10 doi: 10.1109/LED.2002.808155 – start-page: 41 year: 2003 ident: ref12 article-title: characterization of the -instability in gate dielectrics publication-title: Proc Int Reliab Phys Symp Tech Dig doi: 10.1109/RELPHY.2003.1197718 – ident: ref30 doi: 10.1109/RELPHY.2004.1315309 – ident: ref28 doi: 10.1109/16.796299 – ident: ref19 doi: 10.1109/IEDM.2004.1419273 – ident: ref25 doi: 10.1016/j.microrel.2003.08.005 – ident: ref16 doi: 10.1109/LED.2005.852746 – ident: ref24 doi: 10.1109/TED.2005.861597 – start-page: 360 year: 2001 ident: ref6 article-title: relation between breakdown mode and breakdown location in short channel nmosfets and its impact on reliability specifications publication-title: Proc Int Reliab Phys Symp Tech Dig – ident: ref7 doi: 10.1109/IEDM.2003.1269208 – ident: ref23 doi: 10.1109/7298.974830 – ident: ref34 doi: 10.1109/TDMR.2004.841249 – ident: ref11 doi: 10.1109/55.767093 – ident: ref5 doi: 10.1109/TDMR.2004.838416 – ident: ref2 doi: 10.1557/JMR.1996.0350 – start-page: 75 year: 2005 ident: ref33 article-title: interfacial layer dependence of gate stacks on instability and charge trapping using ultra-short pulse characterization publication-title: Proc Int Reliab Phys Symp Tech Dig – ident: ref18 doi: 10.1109/RELPHY.2004.1315350 – ident: ref1 doi: 10.1038/35023243 – ident: ref31 doi: 10.1109/16.987123 – ident: ref26 doi: 10.1109/16.737455 – ident: ref29 doi: 10.1109/MIKON.1998.740934 – ident: ref35 doi: 10.1109/JSSC.2004.831604 – ident: ref4 doi: 10.1109/RELPHY.2003.1197715 – ident: ref15 doi: 10.1109/ESSDER.2005.1546661 – ident: ref27 doi: 10.1109/LED.2004.839209 – ident: ref13 doi: 10.1109/LED.2003.808844 – ident: ref21 doi: 10.1109/IEDM.1997.650388 – ident: ref8 doi: 10.1109/TED.2005.852546 – start-page: 859 year: 2004 ident: ref14 article-title: intrinsic characteristics of high- devices and implications of fast transient charging effect (ftce) publication-title: IEDM Tech Dig – ident: ref32 doi: 10.1109/IEDM.2004.1419195 – start-page: 129 year: 2004 ident: ref17 article-title: physical model of bti, tddb and silc in -based high- gate dielectrics publication-title: IEDM Tech Dig – ident: ref9 doi: 10.1109/TDMR.2003.816656 – ident: ref3 doi: 10.1016/0040-6090(77)90312-1 – ident: ref20 doi: 10.1109/RELPHY.2003.1197715 |
| SSID | ssj0016442 |
| Score | 1.8134958 |
| Snippet | The gate leakage current of HfO 2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast... |
| SourceID | crossref ieee |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 59 |
| SubjectTerms | CMOS oscillators dielectric breakdown (BD) fast transient charge effect Hafnium compounds High-k dielectric materials leakage current Leakage currents Logic gates low-noise amplifier (LNA) Noise measurement reliability Stress Transistors |
| Title | CMOS Device and Circuit Degradations Subject to \hbox Gate Breakdown and Transient Charge-Trapping Effect |
| URI | https://ieeexplore.ieee.org/document/4039715 |
| Volume | 54 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIEE databaseName: IEEE Electronic Library (IEL) issn: 0018-9383 databaseCode: RIE dateStart: 19630101 customDbUrl: isFulltext: true dateEnd: 99991231 titleUrlDefault: https://ieeexplore.ieee.org/ omitProxy: false ssIdentifier: ssj0016442 providerName: IEEE |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LSwMxEA61Jz34qmJ9kYMHD-42202yu0etShGqBy30IJS8tpbKVuoWxF_vJNnWIgrewjCBwCTzzHyD0BmJFI00pUHOYx5Q8IgCmUOUYvJUC2akIq4U07vn3T69G7BBDV0se2GMMe7zmQnt0tXy9VTNbaqsRQlYT9tRvpak3PdqLSsGYNc9MngEDxjCrgrGJyJZC1SArzrAg2JuMtm3BVoZqeIsyu0W6i3O4j-STMJ5KUP1-QOm8b-H3UablWuJL_1d2EE1U-yijRXAwQYad3oPj_jaWPWARaFxZzxT83EJpNFM-PFK7xiUic3O4HKKn1_k9APbFBu-AvdyoiFodxudjbO9lNgW7EcmAIKFehhhj4e8h_q3N0-dblANWwgURIUsSGQseB6JqM2ZihKpRVulbdmWFr8lIjJnGcmZbXTlscwEI7nmggqlVRqnSvJ4H9WLaWEOEBYUtASoTVAHmhqi0wQYlKAqVQkTTDZRuBDAUFVI5HYgxuvQRSQkG4LE7HxMPvQSa6Lz5YY3D8LxN2vDimLJVknh8HfyEVr3uVqbUjlG9XI2NyfgZJTy1N2uL-X5zig |
| linkProvider | IEEE |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LSwMxEA5FD-rBt_g2Bw8e3DbbTdLdo1alPqoHW-hBWPLaWiqt1F0Qf72TZK1FFLyFYQKBSeaZ-QahYxIqGmpKg4xHPKDgEQUygyjFZLEWzEhFXCmmfc9bXXrTY70KOp32whhj3OczU7VLV8vXY1XYVFmNErCetqN8nlFKme_WmtYMwLJ7bPAQnjAEXiWQT0iSGigBX3eAJ8XcbLJvGzQzVMXZlKsV1P46jf9KMqwWuayqjx9Ajf897ipaLp1LfOZvwxqqmNE6WpqBHNxAg2b74RFfGKsgsBhp3BxMVDHIgdSfCD9g6Q2DOrH5GZyP8dOzHL9jm2TD5-BgDjWE7W6js3K2mxLbkn3fBECwYA997BGRN1H36rLTbAXluIVAQVzIgoaMBM9CEdY5U2FDalFXcV3WpUVwCYnMWEIyZltdeSQTwUimuaBCaRVHsZI82kJzo_HIbCMsKOgJUJygEDQ1RMcNYFCCqlg1mGByB1W_BJCqEovcjsR4SV1MQpIUJGYnZPLUS2wHnUw3vHoYjr9ZN6wopmylFHZ_Jx-hhVanfZfeXd_f7qFFn7m1CZZ9NJdPCnMALkcuD91N-wTc0dF1 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=CMOS+Device+and+Circuit+Degradations+Subject+to+%5Chbox+Gate+Breakdown+and+Transient+Charge-Trapping+Effect&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=Yu%2C+Chuanzhao&rft.au=Yuan%2C+J.+S.&rft.date=2007-01-01&rft.pub=IEEE&rft.issn=0018-9383&rft.volume=54&rft.issue=1&rft.spage=59&rft.epage=67&rft_id=info:doi/10.1109%2FTED.2006.887517&rft.externalDocID=4039715 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon |