Spin-Valley Polarized Quantum Anomalous Hall Effect and a Valley-Controlled Half Metal in Bilayer Graphene
We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that at finite bias and light intensity the system transitions into a previously unknown spin-valley polarized quantum anomalous Hall (SVP-QAH) ins...
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| Published in | arXiv.org |
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| Main Authors | , |
| Format | Paper Journal Article |
| Language | English |
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Cornell University Library, arXiv.org
28.04.2020
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| ISSN | 2331-8422 |
| DOI | 10.48550/arxiv.1911.05980 |
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| Abstract | We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that at finite bias and light intensity the system transitions into a previously unknown spin-valley polarized quantum anomalous Hall (SVP-QAH) insulator state, for which the subsystem of one spin is a valley Hall topological insulator (TI) and that of the other spin is a QAH insulator. We assess the TI phases occurring in the system by analytically calculating the spin-valley dependent Chern number, and characterize them by considering edge states in a nanoribbon. We demonstrate that the SVP-QAH edge states lead to a unique spin rectification effect in a domain wall. Along the phase boundary, we observe a bulk half-metal state with Berry's phase of 2\pi. |
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| AbstractList | We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that at finite bias and light intensity the system transitions into a previously unknown spin-valley polarized quantum anomalous Hall (SVP-QAH) insulator state, for which the subsystem of one spin is a valley Hall topological insulator (TI) and that of the other spin is a QAH insulator. We assess the TI phases occurring in the system by analytically calculating the spin-valley dependent Chern number, and characterize them by considering edge states in a nanoribbon. We demonstrate that the SVP-QAH edge states lead to a unique spin rectification effect in a domain wall. Along the phase boundary, we observe a bulk half-metal state with Berry's phase of 2\pi. Phys. Rev. B 101, 155425 (2020) We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that at finite bias and light intensity the system transitions into a previously unknown spin-valley polarized quantum anomalous Hall (SVP-QAH) insulator state, for which the subsystem of one spin is a valley Hall topological insulator (TI) and that of the other spin is a QAH insulator. We assess the TI phases occurring in the system by analytically calculating the spin-valley dependent Chern number, and characterize them by considering edge states in a nanoribbon. We demonstrate that the SVP-QAH edge states lead to a unique spin rectification effect in a domain wall. Along the phase boundary, we observe a bulk half-metal state with Berry's phase of 2 |
| Author | Zhai, Xuechao Blanter, Yaroslav M |
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| BackLink | https://doi.org/10.1103/PhysRevB.101.155425$$DView published paper (Access to full text may be restricted) https://doi.org/10.48550/arXiv.1911.05980$$DView paper in arXiv |
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| Snippet | We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that... Phys. Rev. B 101, 155425 (2020) We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and... |
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| SubjectTerms | Antiferromagnetism Bias Bilayers Domain walls Graphene Interlayers Luminous intensity Physics - Mesoscale and Nanoscale Physics Quantum Hall effect Subsystems Topological insulators |
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| Title | Spin-Valley Polarized Quantum Anomalous Hall Effect and a Valley-Controlled Half Metal in Bilayer Graphene |
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