APA (7th ed.) Citation

Walter, S. R., Youn, J., Emery, J. D., Kewalramani, S., Hennek, J. W., Bedzyk, M. J., . . . Geiger, F. M. (2012). In-Situ Probe of Gate Dielectric-Semiconductor Interfacial Order in Organic Transistors: Origin and Control of Large Performance Sensitivities. Journal of the American Chemical Society, 134(28), 11726-11733. https://doi.org/10.1021/ja3036493

Chicago Style (17th ed.) Citation

Walter, Stephanie R., Jangdae Youn, Jonathan D. Emery, Sumit Kewalramani, Jonathan W. Hennek, Michael J. Bedzyk, Antonio Facchetti, Tobin J. Marks, and Franz M. Geiger. "In-Situ Probe of Gate Dielectric-Semiconductor Interfacial Order in Organic Transistors: Origin and Control of Large Performance Sensitivities." Journal of the American Chemical Society 134, no. 28 (2012): 11726-11733. https://doi.org/10.1021/ja3036493.

MLA (9th ed.) Citation

Walter, Stephanie R., et al. "In-Situ Probe of Gate Dielectric-Semiconductor Interfacial Order in Organic Transistors: Origin and Control of Large Performance Sensitivities." Journal of the American Chemical Society, vol. 134, no. 28, 2012, pp. 11726-11733, https://doi.org/10.1021/ja3036493.