High Mobility HgTe Microstructures for Quantum Spin Hall Studies

• Published in: Nano letters Vol. 18; no. 8; pp. 4831 - 4836
• Main Authors: Bendias, Kalle, Shamim, Saquib, Herrmann, Oliver, Budewitz, Andreas, Shekhar, Pragya, Leubner, Philipp, Kleinlein, Johannes, Bocquillon, Erwann, Buhmann, Hartmut, Molenkamp, Laurens W.
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 08.08.2018
• Subjects: wet etching; HgTe; quantum spin Hall effect; mobility; topological superconductivity; Topological insulators
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/acs.nanolett.8b01405

The topic of two-dimensional topological insulators has blossomed after the first observation of the quantum spin Hall (QSH) effect in HgTe quantum wells. However, studies have been hindered by the relative fragility of the edge states. Their stability has been a subject of both theoretical and experimental investigation in the past decade. Here, we present a new generation of high quality (Cd,Hg)­Te/HgTe-structures based on a new chemical etching method. From magnetotransport measurements on macro- and microscopic Hall bars, we extract electron mobilities μ up to about 400 × 103 cm2/(V s), and the mean free path λmfp becomes comparable to the sample dimensions. The Hall bars show quantized spin Hall conductance, which is remarkably stable up to 15 K. The clean and robust edge states allow us to fabricate high quality side-contacted Josephson junctions, which are significant in the context of topological superconductivity. Our results open up new avenues for fundamental research on QSH effect as well as potential applications in spintronics and topological quantum computation.