Synthesis, Characterization, and Application of Indolo[3,2-b]carbazole Semiconductors

• Published in: Journal of the American Chemical Society Vol. 129; no. 29; pp. 9125 - 9136
• Main Authors: Boudreault, Pierre-Luc T, Wakim, Salem, Blouin, Nicolas, Simard, Michel, Tessier, Christian, Tao, Ye, Leclerc, Mario
• Format: Journal Article
• Language: English
• Published: WASHINGTON American Chemical Society 25.07.2007; Amer Chemical Soc
• Subjects: Chemistry; Chemistry, Multidisciplinary; Physical Sciences; Science & Technology; HIGH-PERFORMANCE; POLYMERS; FUNCTIONALIZED ACENES; CONDUCTIVE PROPERTIES; CHARGE-TRANSPORT; THIN-FILM TRANSISTORS; HIGH-ELECTRON-MOBILITY; ORGANIC SEMICONDUCTORS; FIELD-EFFECT TRANSISTORS; OLIGOMERS
• ISSN: 0002-7863; 1520-5126
• DOI: 10.1021/ja071923y

The synthesis, characterization, and field-effect transistor (FET) properties of new indolo[3,2-b]carbazoles are described. In particular, an extensive characterization of their crystal structures has revealed the importance of the nature of the side chains (alkyl, phenyl, thienyl substituents) on their solid-state organization. These organic materials have exhibited p-type FET behavior with hole mobilities as high as 0.2 cm2 V-1 s-1 with an on/off current ratio higher than 106. Best results were obtained with phenyl-substituted indolo[3,2-b]carbazoles since the presence of phenyl substituents seems to allow efficient overlap between the oligomeric molecules. More importantly, FET properties were kept constant during several months in air.