High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction
A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p–n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surfa...
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| Published in | ACS applied materials & interfaces Vol. 10; no. 9; pp. 8102 - 8109 |
|---|---|
| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
07.03.2018
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1944-8244 1944-8252 1944-8252 |
| DOI | 10.1021/acsami.7b16498 |
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| Abstract | A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p–n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium–gallium–zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p–n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV–visible rejection ratio up to 3.5 × 107, and a specific detectivity up to 3.3 × 1014 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays. |
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| AbstractList | A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO
/IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10
, and a specific detectivity up to 3.3 × 10
Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays. A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p–n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium–gallium–zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnOₓ/IGZO heterojunction structure, through which the formation of a p–n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV–visible rejection ratio up to 3.5 × 10⁷, and a specific detectivity up to 3.3 × 10¹⁴ Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays. A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p–n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium–gallium–zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p–n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV–visible rejection ratio up to 3.5 × 107, and a specific detectivity up to 3.3 × 1014 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays. A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x/IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 107, and a specific detectivity up to 3.3 × 1014 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x/IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 107, and a specific detectivity up to 3.3 × 1014 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays. |
| Author | Javaid, Kashif Liang, Yu Zhang, Hongliang Wu, Weihua Chang, Ting-Chang Song, Anran Shi, Wen Liang, Lingyan Yu, Jingjing Cao, Hongtao |
| AuthorAffiliation | Chinese Academy of Sciences Shanghai University Key Laboratory of Graphene Technologies and Applications of Zhejiang Province & Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering School of Materials Science and Engineering National Sun Yat-Sen University Department of Physics |
| AuthorAffiliation_xml | – name: Shanghai University – name: National Sun Yat-Sen University – name: Department of Physics – name: Chinese Academy of Sciences – name: School of Materials Science and Engineering – name: Key Laboratory of Graphene Technologies and Applications of Zhejiang Province & Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering |
| Author_xml | – sequence: 1 givenname: Jingjing surname: Yu fullname: Yu, Jingjing organization: Chinese Academy of Sciences – sequence: 2 givenname: Kashif surname: Javaid fullname: Javaid, Kashif organization: Department of Physics – sequence: 3 givenname: Lingyan surname: Liang fullname: Liang, Lingyan email: lly@nimte.ac.cn organization: Chinese Academy of Sciences – sequence: 4 givenname: Weihua surname: Wu fullname: Wu, Weihua organization: Chinese Academy of Sciences – sequence: 5 givenname: Yu surname: Liang fullname: Liang, Yu organization: Chinese Academy of Sciences – sequence: 6 givenname: Anran surname: Song fullname: Song, Anran organization: Chinese Academy of Sciences – sequence: 7 givenname: Hongliang surname: Zhang fullname: Zhang, Hongliang organization: Chinese Academy of Sciences – sequence: 8 givenname: Wen surname: Shi fullname: Shi, Wen organization: Shanghai University – sequence: 9 givenname: Ting-Chang orcidid: 0000-0002-5301-6693 surname: Chang fullname: Chang, Ting-Chang organization: National Sun Yat-Sen University – sequence: 10 givenname: Hongtao orcidid: 0000-0002-4458-4621 surname: Cao fullname: Cao, Hongtao email: h_cao@nimte.ac.cn organization: Chinese Academy of Sciences |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/29441792$$D View this record in MEDLINE/PubMed |
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| Title | High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction |
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