Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range th...
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| Published in | Nano letters Vol. 16; no. 10; pp. 6052 - 6057 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
12.10.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1530-6984 1530-6992 |
| DOI | 10.1021/acs.nanolett.6b01987 |
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| Abstract | We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally resolved photon-correlation measurements verify single photon emission, even when multiple emission lines are simultaneously excited within the same h-BN flake. We also present a detailed study of the temperature-dependent line width, spectral energy shift, and intensity for two different zero-phonon lines centered at 575 and 682 nm, which reveals a nearly identical temperature dependence despite a large difference in transition energy. Our temperature-dependent results are well described by a lattice vibration model that considers piezoelectric coupling to in-plane phonons. Finally, polarization spectroscopy measurements suggest that whereas the 575 nm emission line is directly excited by 532 nm excitation, the 682 nm line is excited indirectly. |
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| AbstractList | We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally resolved photon-correlation measurements verify single photon emission, even when multiple emission lines are simultaneously excited within the same h-BN flake. We also present a detailed study of the temperature-dependent line width, spectral energy shift, and intensity for two different zero-phonon lines centered at 575 and 682 nm, which reveals a nearly identical temperature dependence despite a large difference in transition energy. Our temperature-dependent results are well described by a lattice vibration model that considers piezoelectric coupling to in-plane phonons. Finally, polarization spectroscopy measurements suggest that whereas the 575 nm emission line is directly excited by 532 nm excitation, the 682 nm line is excited indirectly. |
| Author | Spencer, Michael G Calderon, Brian Jungwirth, Nicholas R Ji, Yanxin Fuchs, Gregory D Flatté, Michael E |
| AuthorAffiliation | Cornell University University of Iowa |
| AuthorAffiliation_xml | – name: Cornell University – name: University of Iowa |
| Author_xml | – sequence: 1 givenname: Nicholas R surname: Jungwirth fullname: Jungwirth, Nicholas R – sequence: 2 givenname: Brian surname: Calderon fullname: Calderon, Brian – sequence: 3 givenname: Yanxin surname: Ji fullname: Ji, Yanxin – sequence: 4 givenname: Michael G surname: Spencer fullname: Spencer, Michael G – sequence: 5 givenname: Michael E surname: Flatté fullname: Flatté, Michael E – sequence: 6 givenname: Gregory D surname: Fuchs fullname: Fuchs, Gregory D email: gdf9@cornell.edu |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/27580074$$D View this record in MEDLINE/PubMed |
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| Keywords | zero-phonon line 2D material point defect Single-photon source hexagonal boron nitride line width |
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| Snippet | We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in... |
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| Title | Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride |
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