Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells
Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to...
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| Main Author | |
|---|---|
| Format | eBook Book |
| Language | English |
| Published |
Berlin, Heidelberg
Springer
2013
Chemical Industry Press Springer Berlin / Heidelberg Springer Berlin Heidelberg |
| Edition | 1 |
| Series | SpringerBriefs in Applied Sciences and Technology |
| Subjects | |
| Online Access | Get full text |
| ISBN | 9783642370380 3642370381 |
| ISSN | 2191-530X 2191-5318 |
| DOI | 10.1007/978-3-642-37039-7 |
Cover
Table of Contents:
- 6.3 Electroluminescence -- 6.4 a-Si Characterization -- 6.4.1 Ellipsometry -- 6.4.2 Raman -- 6.4.3 Conductivity -- 6.4.4 Deep-Level Transient Spectroscopy -- 6.5 Electronic Device Characterization -- 6.5.1 Current--Voltage Characteristic (IV) -- 6.5.2 Spectral Response -- 6.5.3 Electron Beam-Induced Current -- 7…Simulation -- 7.1 AFORS-HET -- 7.2 Comparison with Experiments -- 8…Long-Term Stability and DegradationLong-term stability and degradation -- 8.1 Long-Term Stability -- 8.2 Radiation Hardness -- 8.2.1 Proton Irradiation -- 8.2.2 Electron Irradiation -- 9…State of the Art -- 10…Silicon-Based Heterojunction Solar Cells in ChinaSilicon-based heterojunction solar cells in China -- 10.1 Introduction of the Active Groups in this Area in China -- 10.1.1 Graduate University of the Chinese Academy of Sciences -- 10.1.2 Institute of Electrical Engineering, Chinese Academy of Sciences -- 10.1.3 Nanchang University -- 10.1.4 Shanghai Institute of Microsystem and Information Technology -- 10.1.5 Other Groups -- 10.2 Experimental Studies -- 10.2.1 Texturization and Cleaning -- Texturization -- Cleaning -- 10.2.2 Passivation -- 10.2.3 Doped Layers: Emitter and BSF -- 10.2.4 TCO and Metal Contacts -- 10.2.5 Cell Production -- n-type c-Si substrate -- p-type c-Si substrate -- 10.3 Theoretical Simulation -- References
- Intro -- Preface -- Acknowledgments -- Contents -- Contributors -- 1 Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells -- 1…Introduction -- 1.1 Basic Structure -- 1.2 History of a-Si:H/c-Si Device Development -- 1.3 Economic Aspects -- 2…Useful Material Parameters -- 2.1 Useful Data of Monocrystalline Silicon -- 2.2 Useful Data of Multicrystalline Silicon -- 2.3 Useful Data of Microcrystalline Silicon -- 2.4 Useful Data of Amorphous Silicon with Respect to Heterojunction Solar Cells -- 3…Manufacturing -- 3.1 Lapping and Polishing -- 3.2 Texturing -- 3.3 Cleaning -- 3.4 PECVD of i-, n-, and p-Layers -- 3.5 TCO -- 3.6 Metallization and Screen Printing -- 4…Concepts -- 4.1 Conventional n a-Si:H/p c-Si Cell -- 4.2 Bifacial a-Si:H/c-Si Heterojunction Solar Cell with Intrinsic Thin Layer, HIT Structure -- 4.3 a-Si:H/c-Si Heterocontact Cell Without i-Layer -- 4.4 Other Concepts for Improved Entrance Windows -- 4.5 a-Si:H/c-Si Heterocontact Cell with Inverted Geometry -- 4.6 Interdigitated HIT Cell -- 5…Problems and Challenges -- 5.1 Choice of the Base Material, Impact of the Doping, n/p Versus p/n -- 5.2 Surface States -- 5.3 Surface Passivation -- 5.3.1 SiO2 and SiNx Passivation Schemes -- 5.3.2 a-SiC:H Passivation Scheme -- 5.3.3 a-Si:H Passivation Scheme -- 5.3.4 a-SiOx:H Passivation Scheme -- 5.4 PECV-Deposited Emitter and Back Surface Field -- 5.4.1 Hydrogenated Amorphous Silicon (a-Si:H) -- 5.4.2 Wide-Gap, Hydrogenated Amorphous Silicon Carbide Films (a-SiC:H) -- 5.4.3 Wide-Gap, Hydrogenated MicroCrystalline Silicon Films (microc-Si:H) -- 6…Measurement Techniques -- 6.1 Absorption, Reflection, and Transmission -- 6.2 Excess Charge Carrier Lifetime -- 6.2.1 Quasi-Steady-State and Transient Photoconductance Decay Via Inductive Coupling -- QSSPC -- TPCD -- Combining the Two Measurement Modi -- 6.2.2 In Situ TRMC