Atomic Layer Deposition of Ruthenium on a Titanium Nitride Surface: A Density Functional Theory Study

Because of its excellent properties in nanotechnology applications, atomic layer deposition of ruthenium (Ru) has been the subject of numerous experimental studies. Recently, two different Ru precursors were compared for plasma-enhanced atomic layer deposition (PEALD) of Ru, and their reactivity was...

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Published inJournal of physical chemistry. C Vol. 117; no. 38; pp. 19442 - 19453
Main Authors Phung, Quan Manh, Vancoillie, Steven, Pourtois, Geoffrey, Swerts, Johan, Pierloot, Kristine, Delabie, Annelies
Format Journal Article
LanguageEnglish
Published Columbus, OH American Chemical Society 26.09.2013
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ISSN1932-7447
1932-7455
DOI10.1021/jp405489w

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Abstract Because of its excellent properties in nanotechnology applications, atomic layer deposition of ruthenium (Ru) has been the subject of numerous experimental studies. Recently, two different Ru precursors were compared for plasma-enhanced atomic layer deposition (PEALD) of Ru, and their reactivity was found to be different. Inhibition was observed for bis­(ethyl­cyclo­penta­dienyl)­ruthenium (Ru(EtCp)2), while nearly linear growth behavior was observed for (methyl­cyclo­penta­dienyl-pyrrolyl)­ruthenium (Ru(MeCp)Py). To understand this difference in reactivity, we investigate the adsorption of RuCp2 and RuCpPy (i.e., without substituents) on a TiN surface using calculations based on periodic boundary conditions density functional theory (DFT) combined with experiments based on Rutherford backscattering spectroscopy (RBS). The calculations demonstrate that the RuCpPy precursor chemisorbs on the TiN(100) surface while the RuCp2 precursor only physisorbs. We propose a reaction mechanism for the chemisorption of RuCpPy. The area density of the calculated RuCpPy surface species is compared with the experimental values from RBS. The impact of a H-plasma is also investigated. The DFT calculations and experimental results from RBS provide insight into the adsorption processes of the RuCpPy and RuCp2 precursors on the TiN(100) surface.
AbstractList Because of its excellent properties in nanotechnology applications, atomic layer deposition of ruthenium (Ru) has been the subject of numerous experimental studies. Recently, two different Ru precursors were compared for plasma-enhanced atomic layer deposition (PEALD) of Ru, and their reactivity was found to be different. Inhibition was observed for bis­(ethyl­cyclo­penta­dienyl)­ruthenium (Ru(EtCp)2), while nearly linear growth behavior was observed for (methyl­cyclo­penta­dienyl-pyrrolyl)­ruthenium (Ru(MeCp)Py). To understand this difference in reactivity, we investigate the adsorption of RuCp2 and RuCpPy (i.e., without substituents) on a TiN surface using calculations based on periodic boundary conditions density functional theory (DFT) combined with experiments based on Rutherford backscattering spectroscopy (RBS). The calculations demonstrate that the RuCpPy precursor chemisorbs on the TiN(100) surface while the RuCp2 precursor only physisorbs. We propose a reaction mechanism for the chemisorption of RuCpPy. The area density of the calculated RuCpPy surface species is compared with the experimental values from RBS. The impact of a H-plasma is also investigated. The DFT calculations and experimental results from RBS provide insight into the adsorption processes of the RuCpPy and RuCp2 precursors on the TiN(100) surface.
Author Delabie, Annelies
Phung, Quan Manh
Pourtois, Geoffrey
Swerts, Johan
Vancoillie, Steven
Pierloot, Kristine
AuthorAffiliation Department of Chemistry
University of Antwerp
KU Leuven
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  givenname: Quan Manh
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  givenname: Annelies
  surname: Delabie
  fullname: Delabie, Annelies
  email: delabiea@imec.be
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Issue 38
Keywords Chemisorption
Atomic layer method
RBS
Ruthenium
Theoretical study
Titanium nitride
Boundary conditions
Crystal growth from vapors
Experimental study
Physisorption
Precursor
Atomic layer epitaxial growth
Experimental result
Adsorption
Growth mechanism
Reaction mechanism
Density functional method
Nanotechnology
Language English
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Snippet Because of its excellent properties in nanotechnology applications, atomic layer deposition of ruthenium (Ru) has been the subject of numerous experimental...
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SubjectTerms Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Electron states
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Methods of electronic structure calculations
Physics
Theory and models of film growth
Vapor phase epitaxy; growth from vapor phase
Title Atomic Layer Deposition of Ruthenium on a Titanium Nitride Surface: A Density Functional Theory Study
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