Na-Assisted Molecular Beam Epitaxy of MoS2
Transition metal dichalcogenides (TMDs) hold great promise for next-generation electronics, where both large-domain growth and atomic-level doping control are essential for optimal device performance. While molecular beam epitaxy (MBE) provides unparalleled precision in thickness and composition con...
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| Published in | Inorganic chemistry Vol. 64; no. 36; pp. 18521 - 18528 |
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| Main Authors | , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
American Chemical Society
15.09.2025
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| Online Access | Get full text |
| ISSN | 0020-1669 1520-510X 1520-510X |
| DOI | 10.1021/acs.inorgchem.5c03229 |
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| Abstract | Transition metal dichalcogenides (TMDs) hold great promise for next-generation electronics, where both large-domain growth and atomic-level doping control are essential for optimal device performance. While molecular beam epitaxy (MBE) provides unparalleled precision in thickness and composition control, its application to TMD growth has been fundamentally limited by small domain sizes. Here, we demonstrate a sodium-assisted MBE (Na-MBE) technique to achieve single-crystalline MoS2 domains exceeding 1 μm on Au(111), which is an order of magnitude larger over MoS2 grown on the same substrate with standard MBE techniques. Crucially, in situ studies reveal Na2S as a key growth intermediate that enhances growth rate and sulfur supply. The versatility of this method is demonstrated through the synthesis of compositionally uniform alloyed TMDs (Mo0.5W0.5S2), highlighting its potential for producing doping-controlled 2D materials with micron-scale single-crystalline domains. |
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| AbstractList | Transition metal dichalcogenides (TMDs) hold great promise for next-generation electronics, where both large-domain growth and atomic-level doping control are essential for optimal device performance. While molecular beam epitaxy (MBE) provides unparalleled precision in thickness and composition control, its application to TMD growth has been fundamentally limited by small domain sizes. Here, we demonstrate a sodium-assisted MBE (Na-MBE) technique to achieve single-crystalline MoS2 domains exceeding 1 μm on Au(111), which is an order of magnitude larger over MoS2 grown on the same substrate with standard MBE techniques. Crucially, in situ studies reveal Na2S as a key growth intermediate that enhances growth rate and sulfur supply. The versatility of this method is demonstrated through the synthesis of compositionally uniform alloyed TMDs (Mo0.5W0.5S2), highlighting its potential for producing doping-controlled 2D materials with micron-scale single-crystalline domains. Transition metal dichalcogenides (TMDs) hold great promise for next-generation electronics, where both large-domain growth and atomic-level doping control are essential for optimal device performance. While molecular beam epitaxy (MBE) provides unparalleled precision in thickness and composition control, its application to TMD growth has been fundamentally limited by small domain sizes. Here, we demonstrate a sodium-assisted MBE (Na-MBE) technique to achieve single-crystalline MoS2 domains exceeding 1 μm on Au(111), which is an order of magnitude larger over MoS2 grown on the same substrate with standard MBE techniques. Crucially, in situ studies reveal Na2S as a key growth intermediate that enhances growth rate and sulfur supply. The versatility of this method is demonstrated through the synthesis of compositionally uniform alloyed TMDs (Mo0.5W0.5S2), highlighting its potential for producing doping-controlled 2D materials with micron-scale single-crystalline domains.Transition metal dichalcogenides (TMDs) hold great promise for next-generation electronics, where both large-domain growth and atomic-level doping control are essential for optimal device performance. While molecular beam epitaxy (MBE) provides unparalleled precision in thickness and composition control, its application to TMD growth has been fundamentally limited by small domain sizes. Here, we demonstrate a sodium-assisted MBE (Na-MBE) technique to achieve single-crystalline MoS2 domains exceeding 1 μm on Au(111), which is an order of magnitude larger over MoS2 grown on the same substrate with standard MBE techniques. Crucially, in situ studies reveal Na2S as a key growth intermediate that enhances growth rate and sulfur supply. The versatility of this method is demonstrated through the synthesis of compositionally uniform alloyed TMDs (Mo0.5W0.5S2), highlighting its potential for producing doping-controlled 2D materials with micron-scale single-crystalline domains. |
| Author | Shao, Jing-Jing Shen, Dezhen Jing, Peng-Tao Wang, Jia-Min Xu, Ji-Lian Bao, Yang Qin, Feng Liu, Lei Liu, Deming Yan, Jia-Xu Ju, Lin-Feng Zhan, Da Xu, Hai |
| AuthorAffiliation | Chinese Academy of Sciences State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics University of Chinese Academy of Sciences |
| AuthorAffiliation_xml | – name: University of Chinese Academy of Sciences – name: Chinese Academy of Sciences – name: State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics |
| Author_xml | – sequence: 1 givenname: Jia-Min surname: Wang fullname: Wang, Jia-Min organization: University of Chinese Academy of Sciences – sequence: 2 givenname: Yang orcidid: 0000-0001-9868-4946 surname: Bao fullname: Bao, Yang email: baoyang@ciomp.ac.cn organization: University of Chinese Academy of Sciences – sequence: 3 givenname: Jing-Jing surname: Shao fullname: Shao, Jing-Jing organization: University of Chinese Academy of Sciences – sequence: 4 givenname: Lin-Feng surname: Ju fullname: Ju, Lin-Feng organization: University of Chinese Academy of Sciences – sequence: 5 givenname: Feng surname: Qin fullname: Qin, Feng organization: University of Chinese Academy of Sciences – sequence: 6 givenname: Jia-Xu orcidid: 0000-0002-9683-1188 surname: Yan fullname: Yan, Jia-Xu organization: University of Chinese Academy of Sciences – sequence: 7 givenname: Peng-Tao orcidid: 0009-0002-2789-0130 surname: Jing fullname: Jing, Peng-Tao organization: University of Chinese Academy of Sciences – sequence: 8 givenname: Ji-Lian surname: Xu fullname: Xu, Ji-Lian organization: University of Chinese Academy of Sciences – sequence: 9 givenname: Da orcidid: 0000-0001-5270-936X surname: Zhan fullname: Zhan, Da organization: University of Chinese Academy of Sciences – sequence: 10 givenname: Deming orcidid: 0000-0003-4895-2986 surname: Liu fullname: Liu, Deming organization: University of Chinese Academy of Sciences – sequence: 11 givenname: Lei orcidid: 0000-0002-9714-2130 surname: Liu fullname: Liu, Lei organization: University of Chinese Academy of Sciences – sequence: 12 givenname: Dezhen surname: Shen fullname: Shen, Dezhen organization: University of Chinese Academy of Sciences – sequence: 13 givenname: Hai orcidid: 0000-0002-4047-7087 surname: Xu fullname: Xu, Hai organization: University of Chinese Academy of Sciences |
| BookMark | eNo9kNtKw0AQhhepYFt9BCGXIiTOnrLZy1rqAapeqODdsoeJpqRJzSagb29Ki1f_8M_HMHwzMmnaBgm5pJBRYPTG-phVTdt9-i_cZtIDZ0yfkCmVDFJJ4WNCpgDjTPNcn5FZjBsA0FzkU3L9bNNFjFXsMSRPbY1-qG2X3KLdJqtd1duf36Qtx80rOyenpa0jXhxzTt7vVm_Lh3T9cv-4XKxTyzjrU1G4EqmQkrqgUAkMIAsQWgdOLZQ5IogCdJBOBOe8V8I5p1SwnBcSlOZzcnW4u-va7wFjb7ZV9FjXtsF2iIYzkXOllIYRpQd0VGA27dA142OGgtl7Mfvy34s5euF_PL9aBA |
| ContentType | Journal Article |
| Copyright | 2025 American Chemical Society |
| Copyright_xml | – notice: 2025 American Chemical Society |
| DBID | 7X8 |
| DOI | 10.1021/acs.inorgchem.5c03229 |
| DatabaseName | MEDLINE - Academic |
| DatabaseTitle | MEDLINE - Academic |
| DatabaseTitleList | MEDLINE - Academic |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Chemistry |
| EISSN | 1520-510X |
| EndPage | 18528 |
| ExternalDocumentID | i87702107 |
| GroupedDBID | --- -DZ -~X .K2 4.4 55A 5GY 5VS 7~N 85S AABXI ABBLG ABJNI ABLBI ABMVS ABPPZ ABQRX ABUCX ACGFS ACJ ACNCT ACS ADHLV AEESW AENEX AFEFF AGXLV AHGAQ ALMA_UNASSIGNED_HOLDINGS AQSVZ BAANH CS3 CUPRZ D0L DU5 EBS ED~ F5P GGK GNL IH2 IH9 IHE JG~ LG6 ROL RXW TAE TN5 TWZ UI2 UKR UPT VF5 VG9 W1F WH7 XSW YZZ ~02 7X8 |
| ID | FETCH-LOGICAL-a232t-48bfe14551bd7e74ed0580499d31a0f6ee04809d5b4dbbcc74bbb77da33850793 |
| IEDL.DBID | ACS |
| ISSN | 0020-1669 1520-510X |
| IngestDate | Thu Sep 04 12:33:07 EDT 2025 Tue Sep 16 03:10:24 EDT 2025 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 36 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-a232t-48bfe14551bd7e74ed0580499d31a0f6ee04809d5b4dbbcc74bbb77da33850793 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ORCID | 0000-0002-4047-7087 0000-0002-9683-1188 0009-0002-2789-0130 0000-0003-4895-2986 0000-0002-9714-2130 0000-0001-5270-936X 0000-0001-9868-4946 |
| PQID | 3246377790 |
| PQPubID | 23479 |
| PageCount | 8 |
| ParticipantIDs | proquest_miscellaneous_3246377790 acs_journals_10_1021_acs_inorgchem_5c03229 |
| PublicationCentury | 2000 |
| PublicationDate | 2025-09-15 |
| PublicationDateYYYYMMDD | 2025-09-15 |
| PublicationDate_xml | – month: 09 year: 2025 text: 2025-09-15 day: 15 |
| PublicationDecade | 2020 |
| PublicationTitle | Inorganic chemistry |
| PublicationTitleAlternate | Inorg. Chem |
| PublicationYear | 2025 |
| Publisher | American Chemical Society |
| Publisher_xml | – name: American Chemical Society |
| SSID | ssj0009346 |
| Score | 2.487366 |
| Snippet | Transition metal dichalcogenides (TMDs) hold great promise for next-generation electronics, where both large-domain growth and atomic-level doping control are... |
| SourceID | proquest acs |
| SourceType | Aggregation Database Publisher |
| StartPage | 18521 |
| Title | Na-Assisted Molecular Beam Epitaxy of MoS2 |
| URI | http://dx.doi.org/10.1021/acs.inorgchem.5c03229 https://www.proquest.com/docview/3246377790 |
| Volume | 64 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVABC databaseName: American Chemical Society customDbUrl: eissn: 1520-510X dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0009346 issn: 0020-1669 databaseCode: ACS dateStart: 19620201 isFulltext: true titleUrlDefault: https://pubs.acs.org/action/showPublications?display=journals providerName: American Chemical Society |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1La8JAEB6sPbSXvkvtixR6EqJms7sxRyuKFJSCFbyFfeVSVGgitP31nYlJexChvW5gyWRmM9-wM98H8GhDrmWK5xuxMve5DZSveZr6mAwUs0qYsGgeH0_kaMaf52Jeg_aOG3wWtJXJEIPiChqxaAnTwRCM92CfySiiHr5ef_rLshtuJnOoJgqkjKuRnV3bUEoy2dZvuMgtw2N4qSZ0Ni0lb611rlvma5uw8a-vfQJHJc70epvAOIWaW57BQb-SdzuH5kT56BvysvXGlUiu9-TUwhuQlMjHp7dK8cmUXcBsOHjtj_xSOMFXCJByn3d16oiBPNA2chF3tiO6VNvYMFCdVDpHk-SxFZpbrY2JuNY6iqzCelUQY94l1JerpbsCT1D9xnTMiGXG8FApZx3CkpRJI9D9DWiipUkZ-FlS3GmzIKHFH_OT0vwGPFQfOkFr6WpCLd1qnSUI62QYEffh9X82vIFDRnq8JOkgbqGev6_dHYKEXN8XgfENuii3Ww |
| linkProvider | American Chemical Society |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1La8JAEB6sPdhL36X2mUJPQqxJdjfmaEWxrXpRqbewm91AKUZoFNr--s7ERKGlB68bGGayszszzM73AdxrjykR4_nGXJnZTDvSViyObQwG0tWSR172eHwwFL0Je57yaQlEMQuDSqQoKc2a-Bt0AeeB1t4SXEVbZnUeNdATgx3Y5YI5VHS12qMN2K63GtCh0sgRIigmd_4TQ5EpSv_cxlmI6R7A61q57GXJe325UPXo-xdu4_baH8J-nnVarZWbHEHJJMdQaRdkbydQG0obd4r2XFuDgjLXejRyZnWIWOTzy5rH-GXknsKk2xm3e3ZOo2BLTJcWNmuq2BAeuaO0b3xmdIM3qdLRniMbsTCG5soDzRXTSkWRz5RSvq8lVq-c8PPOoJzME3MOFqdqzlWBS5gzEfOkNNpgkhK7IuLoDFWooaVhfgzSMOtwu05Ii2vzw9z8KtwV_ztEa6lRIRMzX6YhJnnC8wkJ8WIbgbdQ6Y0H_bD_NHy5hD2XmHqJ7IFfQXnxsTTXmD4s1E3mKz-v-r-9 |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEF60gnrxLdZnBE-F1CbZ3TRHrS310SLUQsFD2CeINBWTgvrrnUmTCooHve7CsJOdyXzD7HxDyJkOqOQW_BuwMnWp9oQrqbUuBAPha8FUkD8e7_V5d0hvRmxUvKrEXhg4RAqS0ryIj179om3BMOCd4_pTAjugz7jOVAOsMVokS4yDuyMsag2-CHeDWZMOpkce51HZvfObGIxOKv3xR87DTGedPM4PmL8uea5PM1lXH9-4G_-nwQZZK9CnczEzl02yYJItstIqh75tk1pfuHBjePfa6ZWjc51LI8ZOGweMvL07Ews7A3-HDDvth1bXLcYpuAJgU-bSprQGeck9qUMTUqMbrIkZjw480bDcGOwvjzSTVEupVEillGGoBWSxDHn0dkklmSRmjzgMszpfRj5yzygaCGG0AbBifa4YGEWV1EDTuHCHNM4r3b4X4-Jc_bhQv0pOy28eg7ZYsBCJmUzTGMAeD0JkRNz_i8ATsnx_1Ynvrvu3B2TVx4G9OPOBHZJK9jo1R4AiMnmcm8snFynCQA |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Na-Assisted+Molecular+Beam+Epitaxy+of+MoS2&rft.jtitle=Inorganic+chemistry&rft.au=Wang%2C+Jia-Min&rft.au=Bao%2C+Yang&rft.au=Shao%2C+Jing-Jing&rft.au=Ju%2C+Lin-Feng&rft.date=2025-09-15&rft.pub=American+Chemical+Society&rft.issn=0020-1669&rft.eissn=1520-510X&rft.volume=64&rft.issue=36&rft.spage=18521&rft.epage=18528&rft_id=info:doi/10.1021%2Facs.inorgchem.5c03229&rft.externalDocID=i87702107 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0020-1669&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0020-1669&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0020-1669&client=summon |