Tunnel FET-based ultra-low power, high-sensitivity UHF RFID rectifier

• Published in: Proceedings of the 2013 International Symposium on Low Power Electronics and Design pp. 157 - 162
• Main Authors: Liu, Huichu, Vaddi, Ramesh, Datta, Suman, Narayanan, Vijaykrishnan
• Format: Conference Proceeding
• Language: English
• Published: Piscataway, NJ, USA IEEE Press 04.09.2013
• Series: ACM Conferences
• Subjects: Applied computing > Physical sciences and engineering > Electronics; Hardware > Communication hardware, interfaces and storage; Hardware > Hardware validation; energy scavenging; rectifiers; tunnel FETs; RF circuits
• ISBN: 1479912352; 9781479912353
• DOI: 10.5555/2648668.2648710

Hetero-junction Tunnel FET (HTFET) for ultra-low power RF circuit design has been explored at the device and circuit level. In this paper, benchmarking and design insights for optimizing the performance of the TFET based differential drive rectifier is presented. Our evaluation of the HTFET based rectifier demonstrates its promise compared to the state-of-art passive RFIDs. With the 10-stage optimized TFET rectifier at 915 MHz, PCE of 98% with 0.5 nW power consumption, sensitivity of -24dBm for 9 μW PDC and sensitivity of -33dBm for 0.4μW PDC were achieved.