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Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations
Chen, Leilei, Jin, Ning, Yan, Dawei, Cao, Yanrong, Zhao, Linna, Liang, Hailian, Liu, Bin, Zhang, En Xia, Gu, Xiaofeng, Schrimpf, Ronald D., Fleetwood, Daniel M., Lu, Hai
Published in IEEE transactions on electron devices (01.03.2020)
Published in IEEE transactions on electron devices (01.03.2020)
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Journal Article
Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology
Tonigan, Andrew M., Ball, Dennis, Vizkelethy, Gyorgy, Black, Jeffrey, Black, Dolores, Trippe, James, Bielejec, Edward, Alles, Michael L., Reed, Robert, Schrimpf, Ronald D.
Published in IEEE transactions on nuclear science (01.03.2021)
Published in IEEE transactions on nuclear science (01.03.2021)
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Journal Article
Understanding the Average Electron-Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations
Jingtian Fang, Reaz, Mahmud, Weeden-Wright, Stephanie L., Schrimpf, Ronald D., Reed, Robert A., Weller, Robert A., Fischetti, Massimo V., Pantelides, Sokrates T.
Published in IEEE transactions on nuclear science (01.01.2019)
Published in IEEE transactions on nuclear science (01.01.2019)
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Journal Article
Effectiveness of NIEL as a Predictor of Single-Event Displacement Damage Effects in CMOS Circuits
Trippe, James M., Sierawski, Brian D., Mayberry, Grant, Dattilo, Hannah M., Pantelides, Sokrates T., Fleetwood, Daniel M., Schrimpf, Ronald D., Massengill, Lloyd W., Reed, Robert A.
Published in IEEE transactions on nuclear science (01.04.2025)
Published in IEEE transactions on nuclear science (01.04.2025)
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Journal Article
Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs
Puzyrev, Yevgeniy, Paccagnella, Alessandro, Pantelides, Sokrates T., Mukherjee, Shubhajit, Chen, Jin, Roy, Tania, Silvestri, Marco, Schrimpf, Ronald D., Fleetwood, Daniel M., Singh, Jasprit, Hinckley, John M.
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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Journal Article
Depletion-All-Around Operation of the SOI Four-Gate Transistor
Akarvardar, Kerem, Cristoloveanu, Sorin, Gentil, Pierre, Schrimpf, Ronald D., Blalock, Benjamin J.
Published in IEEE transactions on electron devices (01.02.2007)
Published in IEEE transactions on electron devices (01.02.2007)
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Journal Article
Failure Estimates for SiC Power MOSFETs in Space Electronics
Galloway, Kenneth F., Witulski, Arthur F., Schrimpf, Ronald D., Sternberg, Andrew L., Ball, Dennis R., Javanainen, Arto, Reed, Robert A., Sierawski, Brian D., Lauenstein, Jean-Marie
Published in Aerospace (01.09.2018)
Published in Aerospace (01.09.2018)
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Journal Article
Radiation Effects in AlGaN/GaN HEMTs
Fleetwood, Daniel M., Zhang, En Xia, Schrimpf, Ronald D., Pantelides, Sokrates T.
Published in IEEE transactions on nuclear science (01.05.2022)
Published in IEEE transactions on nuclear science (01.05.2022)
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Journal Article
Two-Photon Absorption Induced Single-Event Effects: Correlation Between Experiment and Simulation
Hales, Joel M., Roche, Nicolas J.-H, Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen, Warner, Jeffrey, Turowski, Marek, Lilja, Klas, Hooten, Nicholas C., Zhang, En Xia, Reed, Robert A., Schrimpf, Ronald D.
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs
King, M P, Reed, R A, Weller, R A, Mendenhall, M H, Schrimpf, R D, Alles, M L, Auden, E C, Armstrong, S E, Asai, M
Published in IEEE transactions on nuclear science (01.12.2010)
Published in IEEE transactions on nuclear science (01.12.2010)
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Journal Article
Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices
Cher Xuan Zhang, En Xia Zhang, Fleetwood, D. M., Schrimpf, R. D., Dhar, S., Sei-Hyung Ryu, Xiao Shen, Pantelides, S. T.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Total ionizing dose effects in shallow trench isolation oxides
Faccio, Federico, Barnaby, Hugh J., Chen, Xiao J., Fleetwood, Daniel M., Gonella, Laura, McLain, Michael, Schrimpf, Ronald D.
Published in Microelectronics and reliability (01.07.2008)
Published in Microelectronics and reliability (01.07.2008)
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Journal Article
Erratum: “Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation” [J. Appl. Phys. 133, 015703 (2023)]
Tuttle, Blair R., Karom, Nathaniel, O'Hara, Andrew, Schrimpf, Ronald D., Pantelides, Sokrates T.
Published in Journal of applied physics (21.12.2024)
Published in Journal of applied physics (21.12.2024)
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Journal Article
Single-Event Charge Collection and Upset in 40-nm Dual- and Triple-Well Bulk CMOS SRAMs
Chatterjee, I., Narasimham, B., Mahatme, N. N., Bhuva, B. L., Schrimpf, R. D., Wang, J. K., Bartz, B., Pitta, E., Buer, M.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Experimental Characterization of Radiation-Induced Charge Sharing
Bennett, William G., Hooten, Nicholas C., Schrimpf, Ronald D., Reed, Robert A., Weller, Robert A., Mendenhall, Marcus H., Witulski, Arthur F., Wilkes, D. Mitchell
Published in IEEE transactions on nuclear science (01.12.2013)
Published in IEEE transactions on nuclear science (01.12.2013)
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Journal Article
Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs
Fleetwood, Daniel M., Li, Xun, Zhang, En Xia, Schrimpf, Ronald D., Pantelides, Sokrates T.
Published in IEEE transactions on electron devices (01.02.2024)
Published in IEEE transactions on electron devices (01.02.2024)
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Journal Article
Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate Irradiation
Velo, Y Gonzalez, Boch, Jérôme, Roche, Nicolas Jean-Henri, Perez, Stephanie, Vaille, Jean-Roch, Dusseau, Laurent, Saigne, Frédéric, Lorfevre, Eric, Schrimpf, Ronald D, Chatry, Christian, Canals, Anna
Published in IEEE transactions on nuclear science (01.08.2010)
Published in IEEE transactions on nuclear science (01.08.2010)
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Journal Article