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Modeling of direct tunneling and surface roughness effects on C–V characteristics of ultra-thin gate MOS capacitors

by Zhang, J.-L., Yuan, J.S., Ma, Y., Oates, A.S.
Published in Solid-state electronics (01.02.2001)

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A semi-automated real-time gamma radiation response measurement system for semiconductor device characterisation

by Mu Yifei, Qi Yanfei, Lam Sang, Zhao Cezhou
Published in 2015 12th IEEE International Conference on Electronic Measurement & Instruments (ICEMI) (01.07.2015)

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Role of Injection Barrier in Capacitance-Voltage Measurements of Organic Devices

by Nigam, Akash, Nair, Pradeep R., Premaratne, Malin, Rao, V. Ramgopal
Published in IEEE electron device letters (01.05.2014)

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Fixed oxide charge, interface traps and border traps in MOS structures, grown on plasma hydrogenated (100)-pSi

by Halova, E, Alexandrova, S, Szekeres, A
Published in Journal of Optoelectronics and Advanced Materials (01.10.2009)
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