Search Results - "赵大超" :: K.UTB vyhledávací portál

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生成技术在人工智能平台中的应用探索

by 夏正勋, 杨一帆, 罗圣美, 赵大超, 张燕, 唐剑飞
Published in 大数据 (01.12.2020)

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Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

by 王艳蓉杨红徐昊罗维春祁路伟张淑祥王文武闫江朱慧珑赵超陈大鹏叶甜春
Published in Chinese physics B (01.08.2017)

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Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

by 徐昊杨红王艳蓉王文武罗维春祁路伟李俊峰赵超陈大鹏叶甜春
Published in Chinese physics B (01.08.2016)

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Influence of ultra-thin TiN thickness（1.4 nm and 2.4 nm） on positive bias temperature instability（PBTI）of high-k/metal gate nMOSFETs with gate-last process

by 祁路伟杨红任尚清徐烨峰罗维春徐昊王艳蓉唐波王文武闫江朱慧珑赵超陈大鹏叶甜春
Published in 中国物理B：英文版 (2015)

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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

by 徐昊杨红罗维春徐烨峰王艳蓉唐波王文武祁路伟李俊峰闫江朱慧珑赵超陈大鹏叶甜春
Published in Chinese physics B (01.08.2016)

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Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

by 王艳蓉杨红徐昊王晓磊罗维春祁路伟张淑祥王文武闫江朱慧珑赵超陈大鹏叶甜春
Published in Chinese physics B (01.11.2015)

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An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness

by 马雪丽杨红王文武殷华湘朱慧珑赵超陈大鹏叶甜春
Published in Journal of semiconductors (01.09.2014)

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The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks

by 马雪丽杨红王文武殷华湘朱慧珑赵超陈大鹏叶甜春
Published in Journal of semiconductors (01.10.2014)

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Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process

by 任尚清杨红唐波徐昊罗维春唐兆云徐烨锋许静王大海李俊峰闫江赵超陈大鹏叶甜春王文武
Published in Journal of semiconductors (2015)

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Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

by 徐昊杨红王艳蓉王文武万光星任尚清罗维春祁路伟赵超陈大鹏刘新宇叶甜春
Published in Journal of semiconductors (01.05.2016)

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Simulations of backgate sandwich nanowire MOSFETs with improved device performance

by 赵恒亮朱慧珑钟健马小龙魏星赵超陈大鹏叶甜春
Published in Journal of semiconductors (01.10.2014)

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On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

by 吴昊许淼万光星朱慧珑赵利川童小东赵超陈大鹏叶甜春
Published in Journal of semiconductors (01.11.2014)

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