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Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance

by 范杰汪志刚张波罗小蓉
Published in Chinese physics B (01.04.2013)

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Analytical model for high-voltage SOI device with composite-k dielectric buried layer

by 范杰张波罗小蓉汪志刚李肇基
Published in Journal of semiconductors (01.09.2013)

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Journal Article