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335GHz非平衡式肖特基二极管三倍频器

by 李雨航, 张德海, 孟进, 祁路伟
Published in 红外与毫米波学报 (2023)

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Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

by 王艳蓉杨红徐昊罗维春祁路伟张淑祥王文武闫江朱慧珑赵超陈大鹏叶甜春
Published in Chinese physics B (01.08.2017)

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Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

by 徐昊杨红王艳蓉王文武罗维春祁路伟李俊峰赵超陈大鹏叶甜春
Published in Chinese physics B (01.08.2016)

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Influence of ultra-thin TiN thickness（1.4 nm and 2.4 nm） on positive bias temperature instability（PBTI）of high-k/metal gate nMOSFETs with gate-last process

by 祁路伟杨红任尚清徐烨峰罗维春徐昊王艳蓉唐波王文武闫江朱慧珑赵超陈大鹏叶甜春
Published in 中国物理B：英文版 (2015)

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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

by 徐昊杨红罗维春徐烨峰王艳蓉唐波王文武祁路伟李俊峰闫江朱慧珑赵超陈大鹏叶甜春
Published in Chinese physics B (01.08.2016)

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Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

by 王艳蓉杨红徐昊王晓磊罗维春祁路伟张淑祥王文武闫江朱慧珑赵超陈大鹏叶甜春
Published in Chinese physics B (01.11.2015)

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Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

by 徐昊杨红王艳蓉王文武万光星任尚清罗维春祁路伟赵超陈大鹏刘新宇叶甜春
Published in Journal of semiconductors (01.05.2016)

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335GHz非平衡式肖特基二极管三倍频器

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

Influence of ultra-thin TiN thickness（1.4 nm and 2.4 nm） on positive bias temperature instability（PBTI）of high-k/metal gate nMOSFETs with gate-last process

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

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