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Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

by 王骏成杜刚魏康亮张兴刘晓彦
Published in Chinese physics B (01.11.2012)

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Journal Article

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Influence of gate-source/drain misalignment on the performance of bulk FinFETs by a 3D full band Monte Carlo simulation

by 王骏成杜刚魏康亮曾琅张兴刘晓彦
Published in Journal of semiconductors (01.04.2013)

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Journal Article