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Fabrication of 80-nm T-gate high indium Ino.7Gao.3As/Ino.6Gao.4As composite channels mHEMT on GaAs substrate with simple technological process

by 吉宪张晓东康维华张志利周佳辉徐文俊李琦肖功利尹志军蔡勇张宝顺李海鸥
Published in 半导体学报：英文版 (2016)

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