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Aspect ratio of radiation-hardened MOS transistors: Modelling of the equivalent channel dimensions of integrated MOS transistors in radiation-hardened enclosed layout
Bezhenova, Varvara, Michalowska-Forsyth, Alicja
Published in Elektrotechnik und Informationstechnik (01.02.2018)
Published in Elektrotechnik und Informationstechnik (01.02.2018)
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Journal Article
EKV3 compact modeling of MOS transistors from a 0.18 μm CMOS technology for mixed analog–digital circuit design at low temperature
Martin, P., Cavelier, M., Fascio, R., Ghibaudo, G., Bucher, M.
Published in Cryogenics (Guildford) (01.11.2009)
Published in Cryogenics (Guildford) (01.11.2009)
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Journal Article
Conference Proceeding
Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
Beckers, Arnout, Jazaeri, Farzan, Enz, Christian
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Characterisation and modeling of mismatch in MOS transistors for precision analog design
Lakshmikumar, K.R., Hadaway, R.A., Copeland, M.A.
Published in IEEE journal of solid-state circuits (01.12.1986)
Published in IEEE journal of solid-state circuits (01.12.1986)
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Journal Article
Modeling OFF-state harmonics in MOS transistors used as RF switches
Niemeier, Dennis, Feick, Henning, Bartels, Martin, Cattaneo, Andrea, Malkov, Nikita
Published in Solid-state electronics (01.11.2020)
Published in Solid-state electronics (01.11.2020)
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Journal Article
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures
Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M.
Published in IEEE International Reliability Physics Symposium proceedings (01.04.2020)
Published in IEEE International Reliability Physics Symposium proceedings (01.04.2020)
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Conference Proceeding
Modeling statistical dopant fluctuations in MOS transistors
Stolk, P.A., Widdershoven, F.P., Klaassen, D.B.M.
Published in IEEE transactions on electron devices (01.09.1998)
Published in IEEE transactions on electron devices (01.09.1998)
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Journal Article
Effect of Topographical and Layout Factors on Gate CD Modeling for MOS Transistor Area
Izawa, M., Kurihara, M., Tanaka, J., Kawai, K., Yoshifuku, R., Maruyama, T., Fujiwara, N.
Published in IEEE transactions on semiconductor manufacturing (01.05.2009)
Published in IEEE transactions on semiconductor manufacturing (01.05.2009)
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Journal Article
Modeling and Improvement of Single-Layer MoS 2 /Multilayer MoS 2 Field Effect Transistor Photodetectors
Wang, Haipeng, Zhang, Wei, Wang, Xule, Huang, Haihua, Qiu, Jing, Luo, Jieping, Deng, Shijie, Song, Haizhi
Published in IEEE journal of selected topics in quantum electronics (01.09.2025)
Published in IEEE journal of selected topics in quantum electronics (01.09.2025)
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Journal Article