SiC power module design performance, robustness and reliability
Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carb...
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Other Authors: | , |
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Format: | eBook |
Language: | English |
Published: |
London, United Kingdom
The Institution of Engineering and Technology
2021
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Series: | IET energy engineering series ;
151. |
Subjects: | |
ISBN: | 178561908X 9781785619083 9781785619076 1785619071 |
Physical Description: | 1 online resource illustrations |
LEADER | 03679cam a22004217c 4500 | ||
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245 | 0 | 0 | |a SiC power module design |b performance, robustness and reliability |c edited by Alberto Castellazzi and Andrea Irace |
264 | 1 | |a London, United Kingdom |b The Institution of Engineering and Technology |c 2021 | |
264 | 4 | |c ©2022 | |
300 | |a 1 online resource |b illustrations | ||
336 | |a text |b txt |2 rdacontent | ||
337 | |a computer |b c |2 rdamedia | ||
338 | |a online resource |b cr |2 rdacarrier | ||
490 | 1 | |a IET energy engineering |v 151 | |
506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
520 | |a Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes | ||
505 | 0 | |a Preface -- 1. SiC power MOSFETs and their application / Alberto Castellazzi and Andrea Irace -- 2. Anatomy of a multi-chip power module / Cyrille Duchesne, Philippe Lasserre, and Emmanuel Batista -- 3. Established module design and transfer to SiC technology / Katsuaki Saito -- 4. Temperature-dependent modeling of SiC power MOSFETs for within- and out-of-SOA simulations / Vincenzo d'Alessandro, Michele Riccio, and Andrea Irace -- 5. Optimum module design I: electrothermal / Antonio Pio Catalano, Ciro Scognamillo, Vincenzo d'Alessandro, and Lorenzo Codecasa -- 6. Optimum module design II: impact of parameter design spread / Michele Riccio, Alessandro Borghese, Vincenzo d'Alessandro, Luca Maresca, and Andrea Irace -- 7. Optimum module design III: Electromagnetic / Cyrille Duchesne, Philippe Lasserre, and Emmanuel Batista / 8. Power module lifetime evaluation methodologies / Noriyuki Miyazaki, Nobuyuki Shishido, and Yutaka Hayama -- 9. High-temperature capable SiC power modules by Ag sintering on various metal interfaces / Chuantong Chen and Katsuaki suganuma -- 10. Advanced die-attach validation technologies / Keisuke Wakamoto, Ryosuke Matsumoto, and Takahiro Namazu -- 11. Power module degradation monitoring / Attahir Murtala Aliyu and Alberto Castellazzi -- 12. Advanced thermal management solutions / Xiang Wang and Alberto Castellazzi -- 13. Emerging packaging concepts and technologies / Emre Gurpinar and Burak Ozpineci. | |
590 | |a Knovel |b Knovel (All titles) | ||
650 | 0 | |a Wide gap semiconductors. | |
650 | 0 | |a Silicon carbide. | |
655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
655 | 9 | |a electronic books |2 eczenas | |
700 | 1 | |a Castellazzi, Alberto |e editor | |
700 | 1 | |a Irace, Andrea |e editor | |
776 | 0 | 8 | |i Print version: |t SiC power module design |d London, United Kingdom : The Institution of Engineering and Technology, 2021 |z 1785619071 |w (OCoLC)1240575845 |
830 | 0 | |a IET energy engineering series ; |v 151. | |
856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpSCPMDPRC/sic-power-module?kpromoter=marc |y Full text |