SiC power module design performance, robustness and reliability

Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carb...

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Bibliographic Details
Other Authors: Castellazzi, Alberto (Editor), Irace, Andrea (Editor)
Format: eBook
Language: English
Published: London, United Kingdom The Institution of Engineering and Technology 2021
Series: IET energy engineering series ; 151.
Subjects:
ISBN: 178561908X
9781785619083
9781785619076
1785619071
Physical Description: 1 online resource illustrations

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Table of contents

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245 0 0 |a SiC power module design  |b performance, robustness and reliability  |c edited by Alberto Castellazzi and Andrea Irace 
264 1 |a London, United Kingdom  |b The Institution of Engineering and Technology  |c 2021 
264 4 |c ©2022 
300 |a 1 online resource  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a IET energy engineering  |v 151 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes 
505 0 |a Preface -- 1. SiC power MOSFETs and their application / Alberto Castellazzi and Andrea Irace -- 2. Anatomy of a multi-chip power module / Cyrille Duchesne, Philippe Lasserre, and Emmanuel Batista -- 3. Established module design and transfer to SiC technology / Katsuaki Saito -- 4. Temperature-dependent modeling of SiC power MOSFETs for within- and out-of-SOA simulations / Vincenzo d'Alessandro, Michele Riccio, and Andrea Irace -- 5. Optimum module design I: electrothermal / Antonio Pio Catalano, Ciro Scognamillo, Vincenzo d'Alessandro, and Lorenzo Codecasa -- 6. Optimum module design II: impact of parameter design spread / Michele Riccio, Alessandro Borghese, Vincenzo d'Alessandro, Luca Maresca, and Andrea Irace -- 7. Optimum module design III: Electromagnetic / Cyrille Duchesne, Philippe Lasserre, and Emmanuel Batista / 8. Power module lifetime evaluation methodologies / Noriyuki Miyazaki, Nobuyuki Shishido, and Yutaka Hayama -- 9. High-temperature capable SiC power modules by Ag sintering on various metal interfaces / Chuantong Chen and Katsuaki suganuma -- 10. Advanced die-attach validation technologies / Keisuke Wakamoto, Ryosuke Matsumoto, and Takahiro Namazu -- 11. Power module degradation monitoring / Attahir Murtala Aliyu and Alberto Castellazzi -- 12. Advanced thermal management solutions / Xiang Wang and Alberto Castellazzi -- 13. Emerging packaging concepts and technologies / Emre Gurpinar and Burak Ozpineci. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Wide gap semiconductors. 
650 0 |a Silicon carbide. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Castellazzi, Alberto  |e editor 
700 1 |a Irace, Andrea  |e editor 
776 0 8 |i Print version:  |t SiC power module design  |d London, United Kingdom : The Institution of Engineering and Technology, 2021  |z 1785619071  |w (OCoLC)1240575845 
830 0 |a IET energy engineering series ;  |v 151. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpSCPMDPRC/sic-power-module?kpromoter=marc  |y Full text