SiC power module design performance, robustness and reliability

• Other Authors: Castellazzi, Alberto (Editor), Irace, Andrea (Editor)
• Format: eBook
• Language: English
• Published: London, United Kingdom The Institution of Engineering and Technology 2021
• Series: IET energy engineering series ; 151.
• Subjects: Wide gap semiconductors.; Silicon carbide.; elektronické knihy; electronic books
• ISBN: 178561908X; 9781785619083; 9781785619076; 1785619071
• Physical Description: 1 online resource illustrations
• Access: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty

Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes