Silicon carbide and related materials 2019 : selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and relat...
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| Corporate Author: | |
|---|---|
| Other Authors: | , , , , , |
| Format: | eBook |
| Language: | English |
| Published: |
Baech, Switzerland :
Trans Tech Publications Ltd,
[2020]
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| Series: | Materials science forum ;
v. 1004. |
| Subjects: | |
| ISBN: | 9783035735796 3035735794 9783035715798 3035715793 |
| Physical Description: | 1 online resource (j, 1172 pages) : illustrations (some color), charts |
Cover
Table of contents
| LEADER | 06900cam a2200601 i 4500 | ||
|---|---|---|---|
| 001 | kn-on1182527504 | ||
| 003 | OCoLC | ||
| 005 | 20240717213016.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 200728s2020 sz ad fob 101 0 eng d | ||
| 040 | |a TTECH |b eng |e rda |e pn |c TTECH |d EBLCP |d YDX |d N$T |d OCLCF |d OCLCO |d OSU |d CUS |d OCLCO |d YDXIT |d OCLCO |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO |d OCLCL | ||
| 020 | |a 9783035735796 |q (electronic book) | ||
| 020 | |a 3035735794 |q (electronic book) | ||
| 020 | |z 9783035715798 |q (paperback) | ||
| 020 | |z 3035715793 |q (paperback) | ||
| 035 | |a (OCoLC)1182527504 |z (OCoLC)1182864245 |z (OCoLC)1193122034 | ||
| 111 | 2 | |a International Conference on Silicon Carbide and Related Materials |n (18th : |d 2019 : |c Kyoto, Japan), |j author. | |
| 245 | 1 | 0 | |a Silicon carbide and related materials 2019 : |b selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan / |c edited by Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Shinsuke Harada, Takeshi Mitani and Yasunori Tanaka. |
| 264 | 1 | |a Baech, Switzerland : |b Trans Tech Publications Ltd, |c [2020] | |
| 300 | |a 1 online resource (j, 1172 pages) : |b illustrations (some color), charts | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Materials science forum ; |v volume 1004 | |
| 504 | |a Includes bibliographical references and indexes. | ||
| 506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
| 520 | |a This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging. Silicon Carbide, Crystal Growth, Epitaxial Growth, Thin Films, Layer Growth, Etching, Wafer Machining, Characterization, Measurements, Point Defects, Extended Defects, Quantum Technologies, MOS Gate Stack, Metal-Oxide-Semiconductor Field-Effect Transistor, Bipolar Devices, Junction Field-Effect Transistor, Diodes, Barrier Schottky, Silicon Carbide Power Devices, High-Temperature Reliability, Integrated Circuits Packaging Materials Science, Manufacturing, Electronics. | ||
| 505 | 0 | |a Intro -- Silicon Carbide and Related Materials 2019 -- Preface -- Table of Contents -- Chapter 1: Growth and Wafer Manufacturing -- 1.1: Bulk Crystal Growth -- Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method -- Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method -- Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method -- Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process | |
| 505 | 8 | |a Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6"-SiC Wafer -- Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production -- Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals -- Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC -- An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis -- X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates -- 1.2: Epitaxial and Thin Film Growth | |
| 505 | 8 | |a Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications -- Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool -- Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool -- Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process -- Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al | |
| 505 | 8 | |a Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates -- 1.3: Growth of 3C-SiC Layer -- Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth -- 3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress -- Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC -- Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon -- Mono-Versus Poly-Crystalline SiC for Nuclear Applications -- Microscopic Identification of Surface Steps on SiC by Density-Functional Calculations -- 1.4: Etching and Wafer Machining | |
| 505 | 8 | |a Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology -- Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size -- Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer -- Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen -- Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides -- SiC Epitaxial Reactor Cleaning by ClF3 Gas with the Help of Reaction Heat | |
| 590 | |a Knovel |b Knovel (All titles) | ||
| 650 | 0 | |a Silicon carbide |v Congresses. | |
| 650 | 0 | |a Silicon carbide |x Electric properties |v Congresses. | |
| 650 | 0 | |a Silicon-carbide thin films |v Congresses. | |
| 650 | 0 | |a Nitrides |v Congresses. | |
| 650 | 0 | |a Graphene |v Congresses. | |
| 650 | 0 | |a Crystal growth |v Congresses. | |
| 650 | 0 | |a Wide gap semiconductors |x Materials |v Congresses. | |
| 650 | 0 | |a Wide gap semiconductors |x Materials |x Technological innovations |v Congresses. | |
| 655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
| 655 | 9 | |a electronic books |2 eczenas | |
| 700 | 1 | |a Yano, Hiroshi, |e editor. | |
| 700 | 1 | |a Ohshima, Takeshi, |e editor. | |
| 700 | 1 | |a Eto, Kazuma, |e editor. | |
| 700 | 1 | |a Harada, Shinsuke, |e editor. | |
| 700 | 1 | |a Mitani, Takeshi, |e editor. | |
| 700 | 1 | |a Tanaka, Yasunori, |e editor. | |
| 776 | 0 | 8 | |i Print version: |a International Conference on Silicon Carbide and Related Materials (18th : 2019 : Kyoto, Japan). |t Silicon Carbide and related materials 2019. |d Baech, Switzerland : Scientific.Net, [2020] |z 9783035715798 |w (OCoLC)1222782193 |
| 830 | 0 | |a Materials science forum ; |v v. 1004. | |
| 856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpSCRM0012/silicon-carbide-and?kpromoter=marc |y Full text |
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