Sol-gel spin coating growth of gallium nitride thin films : a simple, safe, and cheap approach

Wide direct band gap gallium nitride (GaN) semiconductor has received significant attention as an ideal material for various applications in the optoelectronic devices. One major use of GaN is the development of energy-efficient solid state light-emitting diodes. Currently, most commercially availab...

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Bibliographic Details
Main Authors: Fong, Chee Yong, (Author), Ng, Sha Shiong, (Author)
Format: eBook
Language: English
Published: Pulau Pinang : Penerbit Universiti Sains Malaysia, 2018.
Subjects:
Semiconductors.
Gallium nitride.
Thin films.
elektronické knihy
electronic books
ISBN: 9781523125500
1523125500
9789674612924
Physical Description: 1 online resource (xx, 78 pages) : illustrations

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Table of contents

LEADER 02681cam a2200385 i 4500
001 kn-on1153345751
003 OCoLC
005 20240717213016.0
006 m o d
007 cr cn|||||||||
008 200506s2018 my a ob 001 0 eng d
040 |a HUA  |b eng  |e rda  |e pn  |c HUA  |d OCLCF  |d OCLCQ  |d UAB  |d OCLCO  |d SFB 
020 |a 9781523125500  |q (electronic bk.) 
020 |a 1523125500  |q (electronic bk.) 
020 |z 9789674612924 
035 |a (OCoLC)1153345751 
100 1 |a Fong, Chee Yong,  |e author. 
245 1 0 |a Sol-gel spin coating growth of gallium nitride thin films :  |b a simple, safe, and cheap approach /  |c Fong Chee Yong, Ng Sha Shiong. 
264 1 |a Pulau Pinang :  |b Penerbit Universiti Sains Malaysia,  |c 2018. 
300 |a 1 online resource (xx, 78 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references and index. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a Wide direct band gap gallium nitride (GaN) semiconductor has received significant attention as an ideal material for various applications in the optoelectronic devices. One major use of GaN is the development of energy-efficient solid state light-emitting diodes. Currently, most commercially available GaN semiconductor are produced through advanced deposition techniques which involve sophisticated technologies and are relatively expensive and complicated to setup. As an alternative, the sol-gel spin coating method, which is relatively simpler, cheaper, safer, and more scalable was proposed. In this book, the process route and recipe for producing highly c-oriented crystalline GaN thin films via the sol-gel spin coating approach were described in detail. Some insights into the factors affecting the surface morphology as well as structural and optical properties of the deposited films were presented. Eventually, this book could inspire further studies into the development of low-cost GaN thin films. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Semiconductors. 
650 0 |a Gallium nitride. 
650 0 |a Thin films. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Ng, Sha Shiong,  |e author. 
776 0 8 |i Print version:  |a Fong, Chee Yong.  |t Sol-gel spin coating growth of gallium nitride thin films  |z 9789674612924 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpSGSCGGN2/sol-gel-spin?kpromoter=marc  |y Full text 

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