Characterisation and control of defects in semiconductors

The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation s...

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Bibliographic Details
Other Authors: Tuomisto, Filip, (Editor)
Format: eBook
Language: English
Published: Stevenage : The Institution of Engineering and Technology, 2019.
Series: Materials, circuits and devices series ; 45.
Subjects:
Ion implantation.
Magnetic resonance.
Semiconductor doping.
Semiconductors > Materials.
Silicon.
elektronické knihy
electronic books
ISBN: 1785616560
9781785616563
9781785616556
1785616552
Physical Description: 1 online resource (596 pages)

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Table of contents

LEADER 02494cam a2200457 i 4500
001 kn-on1132297460
003 OCoLC
005 20240717213016.0
006 m o d
007 cr cn|||||||||
008 191204t20192019enk fob 001 0 eng d
040 |a STF  |b eng  |e pn  |c STF  |d OCLCO  |d UIU  |d CUS  |d OCLCF  |d EBLCP  |d N$T  |d BNG  |d UKAHL  |d OCLCQ  |d YDX  |d VLB  |d OCLCQ  |d OCLCO  |d OCLCQ  |d OCLCO  |d OCLCL 
020 |a 1785616560 
020 |a 9781785616563  |q (electronic bk.) 
020 |z 9781785616556 
020 |z 1785616552 
035 |a (OCoLC)1132297460  |z (OCoLC)1136872350  |z (OCoLC)1197779780 
245 0 0 |a Characterisation and control of defects in semiconductors /  |c edited by Filip Tuomisto. 
264 1 |a Stevenage :  |b The Institution of Engineering and Technology,  |c 2019. 
264 4 |c ©2019 
300 |a 1 online resource (596 pages) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a IET Materials, Circuits & Devices Series ;  |v 45 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation spectroscopy; first principles methods; microscopy; 3D atomic-scale studies; ion beam modification; and ion beam analysis and channelling. 
504 |a Includes bibliographical references and index. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Ion implantation. 
650 0 |a Magnetic resonance. 
650 0 |a Semiconductor doping. 
650 0 |a Semiconductors  |x Materials. 
650 0 |a Silicon. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Tuomisto, Filip,  |e editor. 
776 0 8 |i Ebook version :  |z 9781785616563 
776 0 8 |i Print version:  |t Characterisation and control of defects in semiconductors.  |d Stevenage : The Institution of Engineering and Technology, 2019  |z 1785616552  |z 9781785616556  |w (OCoLC)1091584905 
830 0 |a Materials, circuits and devices series ;  |v 45. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpCCDS0001/characterisation-and-control?kpromoter=marc  |y Full text 

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