Characterisation and control of defects in semiconductors
The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation s...
Saved in:
| Other Authors | |
|---|---|
| Format | Electronic eBook |
| Language | English |
| Published |
Stevenage :
The Institution of Engineering and Technology,
2019.
|
| Series | Materials, circuits and devices series ;
45. |
| Subjects | |
| Online Access | Full text |
| ISBN | 1785616560 9781785616563 9781785616556 1785616552 |
| Physical Description | 1 online resource (596 pages) |
Cover
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | kn-on1132297460 | ||
| 003 | OCoLC | ||
| 005 | 20240717213016.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 191204t20192019enk fob 001 0 eng d | ||
| 040 | |a STF |b eng |e pn |c STF |d OCLCO |d UIU |d CUS |d OCLCF |d EBLCP |d N$T |d BNG |d UKAHL |d OCLCQ |d YDX |d VLB |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO |d OCLCL | ||
| 020 | |a 1785616560 | ||
| 020 | |a 9781785616563 |q (electronic bk.) | ||
| 020 | |z 9781785616556 | ||
| 020 | |z 1785616552 | ||
| 035 | |a (OCoLC)1132297460 |z (OCoLC)1136872350 |z (OCoLC)1197779780 | ||
| 245 | 0 | 0 | |a Characterisation and control of defects in semiconductors / |c edited by Filip Tuomisto. |
| 264 | 1 | |a Stevenage : |b The Institution of Engineering and Technology, |c 2019. | |
| 264 | 4 | |c ©2019 | |
| 300 | |a 1 online resource (596 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a IET Materials, Circuits & Devices Series ; |v 45 | |
| 506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
| 520 | |a The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation spectroscopy; first principles methods; microscopy; 3D atomic-scale studies; ion beam modification; and ion beam analysis and channelling. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 590 | |a Knovel |b Knovel (All titles) | ||
| 650 | 0 | |a Ion implantation. | |
| 650 | 0 | |a Magnetic resonance. | |
| 650 | 0 | |a Semiconductor doping. | |
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 0 | |a Silicon. | |
| 655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
| 655 | 9 | |a electronic books |2 eczenas | |
| 700 | 1 | |a Tuomisto, Filip, |e editor. | |
| 776 | 0 | 8 | |i Ebook version : |z 9781785616563 |
| 776 | 0 | 8 | |i Print version: |t Characterisation and control of defects in semiconductors. |d Stevenage : The Institution of Engineering and Technology, 2019 |z 1785616552 |z 9781785616556 |w (OCoLC)1091584905 |
| 830 | 0 | |a Materials, circuits and devices series ; |v 45. | |
| 856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpCCDS0001/characterisation-and-control?kpromoter=marc |y Full text |