Characterisation and control of defects in semiconductors

The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation s...

Full description

Saved in:
Bibliographic Details
Other Authors Tuomisto, Filip (Editor)
Format Electronic eBook
LanguageEnglish
Published Stevenage : The Institution of Engineering and Technology, 2019.
SeriesMaterials, circuits and devices series ; 45.
Subjects
Online AccessFull text
ISBN1785616560
9781785616563
9781785616556
1785616552
Physical Description1 online resource (596 pages)

Cover

More Information
Summary:The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation spectroscopy; first principles methods; microscopy; 3D atomic-scale studies; ion beam modification; and ion beam analysis and channelling.
Bibliography:Includes bibliographical references and index.
ISBN:1785616560
9781785616563
9781785616556
1785616552
Access:Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
Physical Description:1 online resource (596 pages)