Surface passivation of industrial crystalline silicon solar cells

This timely, comprehensive work on solar cell surface passivation will collect and convey the scientific and technological progress provided by universities, research institutes and companies to implement dielectric passivation layers into the solar cell manufacturing process for c-Si solar cells.

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Bibliographic Details
Other Authors John, Joachim, 1966- (Editor)
Format Electronic eBook
LanguageEnglish
Published Stevenage : Institution of Engineering and Technology, 2018.
SeriesIET energy engineering series ; 106.
Subjects
Online AccessFull text
ISBN1785612476
9781523120659
1523120657
9781785612473
9781785612466
1785612468
Physical Description1 online resource (xxix, 252 pages) : illustrations

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035 |a (OCoLC)1078564014  |z (OCoLC)1076737763 
245 0 0 |a Surface passivation of industrial crystalline silicon solar cells /  |c edited by Joachim John. 
264 1 |a Stevenage :  |b Institution of Engineering and Technology,  |c 2018. 
264 4 |c ©2019 
300 |a 1 online resource (xxix, 252 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a IET Energy engineering ;  |v 106 
504 |a Includes bibliographical references and index. 
505 0 |a Intro; Contents; About the editor; Authors' biographies; Preface; List of acronyms; 1. Market position of PERC silicon solar cells / Jozef Poortmans and Ali Hajjiah; 1.1 Photovoltaics makes a lot of economical sense; 1.2 Photovoltaics, a rapidly growing market; 1.3 PV technologies portfolio; 2. Introduction to surface passivation of industrial crystalline silicon solar cells / Armin G. Aberle; 3. Material properties of AlOx for silicon surface passivation / Bram Hoex; 3.1 Introduction; 3.2 Surface recombination fundamentals; 3.3 Electronic properties of the c-Si/Al2O3 interface 
505 8 |a 3.4 Atomic composition of the c-Si/Al2O3 interface and its relation to its electronic properties3.5 Long-term stability of the silicon surface passivation by Al2O3; 3.6 Conclusion; 4. Material properties of Al2O3 grown on Si: interface trap density (Dit) and fixed charge density (Qf) / Bart Vermang and Hans Goverde; 4.1 Theoretical preface; 4.2 Al2O3 material properties; 4.3 Epilog; 5. PECVD-AlOx / Pierre Saint-Cast and Marc Hofmann; 5.1 Introduction; 5.2 Plasma and layer characteristics of MW-PECVD; 5.3 Plasma and layer characteristics of ICP-PECVD 
505 8 |a 5.4 Performance comparison with other techniques (P & M)6. Atmospheric pressure chemical vapor deposition of aluminum oxide for silicon surface passivation -- background and materials science / Kristopher O. Davis; 6.1 Background on atmospheric pressure chemical vapor deposition; 6.2 Composition and structure of the APCVD Al2O3-Si interface; 7. Al2O3 by atmospheric pressure chemical vapour deposition / Lachlan E. Black; 8. Surface passivation of industrial PERC solar cells / Thorsten Dullweber and Jan Schmidt; 8.1 Introduction; 8.2 Brief historical review; 8.3 Emitter passivation 
505 8 |a 8.4 Rear passivation technologies8.5 Local aluminum rear contacts; 8.6 Industrial PERC process flows; 8.7 Outlook; 9. Al2O3 passivation in industrial solar cells: n-PERT / Emanuele Cornagliotti; 9.1 History of n-PERT solar cells; 9.2 Al2O3 passivation for n-PERT cells; 9.3 Conclusions; 10. Double-layer dielectric stacks for advanced surface passivation of crystalline silicon solar cells / Shubham Duttagupta and Armin Gerhard Aberle; 10.1 Introduction; 10.2 Deposition of PECVD SiOx/SiNx and AlOx/SiNx stacks; 10.3 Characterisation of surface passivation 
505 8 |a 10.4 Investigation of moderately doped p-type silicon surfaces10.5 Investigation on heavily doped pþ silicon surface; 10.6 Industrial Al-LBSF (or PERC) solar cells; 10.7 Summary and conclusions; 11. Hydrogenated amorphous silicon nitride (a-SiNx:H) as surface passivation layer / Machteld Lamers and Arthur Weeber; 11.1 Introduction; 11.2 Surface-passivating properties related to bond structure; 11.3 Effect of nitridation of the interface; 11.4 Ab initio studies; 11.5 Surface-passivating effect of a-SiNx:H layers onto different solar cell architectures; 11.6 Conclusions 
505 8 |a 12. Microwave PE CVD reactor and process for industrial high throughput fabrication of aluminum oxide layers for solar cell applications / Hermann Schlemm, Hans-Peter Sperlich, Gunnar Kohler, Thomas Große and Egbert Vetter 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a This timely, comprehensive work on solar cell surface passivation will collect and convey the scientific and technological progress provided by universities, research institutes and companies to implement dielectric passivation layers into the solar cell manufacturing process for c-Si solar cells. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Solar cells. 
650 0 |a Silicon crystals. 
650 0 |a Surface chemistry. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a John, Joachim,  |d 1966-  |e editor.  |1 https://id.oclc.org/worldcat/entity/E39PCjC9Rdyb4btTQ7y9DyWJjC 
776 0 8 |i Print version:  |t Surface passivation of industrial crystalline silicon solar cells.  |d Stevenage : Institution of Engineering and Technology, 2018  |z 9781785612466  |w (OCoLC)1063579293 
830 0 |a IET energy engineering series ;  |v 106. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpSPICSSC1/surface-passivation-of?kpromoter=marc  |y Full text