Characterization of wide bandgap power semiconductor devices

This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semicondu...

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Bibliographic Details
Main Authors: Wang, Fei (Author), Zhang, Zheyu, (Author), Jones, Edward A., (Author)
Format: eBook
Language: English
Published: Stevenage, United Kingdom : Institution of Engineering and Technology, 2018.
Series: IET energy engineering series ; 128.
Subjects:
Wide gap semiconductors.
Power semiconductors.
Electric capacity.
elektronické knihy
electronic books
ISBN: 9781785614927
1785614924
9781523119349
1523119349
9781785614910
1785614916
Physical Description: 1 online resource (ix, 333 pages) : illustrations

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Table of contents

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008 180910t20182018enka ob 001 0 eng d
040 |a CDN  |b eng  |e rda  |e pn  |c CDN  |d CDN  |d N$T  |d YDX  |d EBLCP  |d OTZ  |d OCLCF  |d STF  |d MERUC  |d LVT  |d CUS  |d UAB  |d KNOVL  |d ESU  |d CEF  |d MERER  |d CUV  |d OCLCQ  |d VLB  |d UKAHL  |d OCLCQ  |d K6U  |d OCLCQ  |d OCLCO  |d OCLCQ  |d OCLCA  |d BRX  |d OCLCQ  |d OCLCO  |d OCLCL  |d SXB  |d COA 
020 |a 9781785614927  |q (electronic bk.) 
020 |a 1785614924  |q (electronic bk.) 
020 |a 9781523119349  |q (electronic bk.) 
020 |a 1523119349  |q (electronic bk.) 
020 |z 9781785614910 
020 |z 1785614916 
024 8 |a (WaSeSS)ssj0002125116 
035 |a (OCoLC)1051214848  |z (OCoLC)1053582309  |z (OCoLC)1162337419  |z (OCoLC)1340104308 
100 1 |a Wang, Fei  |q (Fred),  |e author.  |1 https://id.oclc.org/worldcat/entity/E39PCjthGRVG6f9bgrTm6PdcKd 
245 1 0 |a Characterization of wide bandgap power semiconductor devices /  |c Fei (Fred) Wang, Zheyu Zhang, and Edward A. Jones. 
264 1 |a Stevenage, United Kingdom :  |b Institution of Engineering and Technology,  |c 2018. 
264 4 |c ©2018 
300 |a 1 online resource (ix, 333 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a IET Energy Engineering ;  |v 128 
504 |a Includes bibliographical references and index. 
505 0 |a Intro; Contents; Biographies; Acknowledgments; 1. Introduction; 1.1. Overview of WBG devices; 1.1.1. WBG devices in comparison to Si devices; 1.1.2. WBG device status; 1.2. Motivation for WBG device characterization; 1.3. About this book; References; 2. Pulsed static characterization; 2.1. Fundamentals of pulsed I-V testing; 2.2. Test equipment description; 2.3. Test fixture selection/design; 2.4. Junction temperature control; 2.5. Cryogenic device testing; 2.6. Pulse waveform timing; 2.7. Output (Id-Vds) characteristic; 2.8. Transfer (Id-Vgs) characteristic 
505 8 |a 2.9. Gate current (Ig, ss-Vgs) characteristic2.10. Drain-source leakage (Id, off-Vds) characteristic; 2.11. Summary; References; 3. Junction capacitance characterization; 3.1. Fundamentals of C-V testing; 3.2. Test equipment description; 3.3. Test fixture selection/design and calibration; 3.4. Output capacitance (Coss) characteristic; 3.5. Input capacitance (Ciss) characteristic; 3.6. Reverse transfer capacitance (Crss) characteristic; 3.7. Gate charge (Qg) characteristic; 3.8. Calculation of Coss-related switching energies; 3.9. Summary; References; 4. Fundamentals of dynamic characterization 
505 8 |a 4.1. Switching commutation analysis4.2. Fundamentals of DPT; 4.3. DPT design; 4.3.1. Load inductor; 4.3.2. DC source; 4.3.3. DC capacitor; 4.3.4. Bleeder resistor; 4.4. DPT control; 4.5. Case study; 4.5.1. Load inductor; 4.5.2. DC source; 4.5.3. DC capacitor bank; 4.5.4. Bleeder resistor; 4.5.5. DPT control; 4.6. Summary; References; 5. Gate drive for dynamic characterization; 5.1. Gate drive fundamentals; 5.2. Gate drive-related key device characteristics; 5.2.1. Gate drive design considering device static characteristics; 5.2.2. Gate drive design considering device dynamic characteristics 
505 8 |a 5.3. Gate drive design5.3.1. Signal isolator; 5.3.2. Isolated power supply; 5.3.3. Gate drive IC; 5.3.4. Gate resistor; 5.3.5. Decoupling capacitor; 5.4. Case study; 5.4.1. Signal isolator; 5.4.2. Isolated power supply; 5.4.3. Gate drive IC; 5.4.4. Gate resistor; 5.4.5. Decoupling capacitor; 5.5. Summary; References; 6. Layout design and parasitic management; 6.1. Impact of parasitics on the switching performance; 6.1.1. Gate loop parasitics; 6.1.2. Power loop parasitics; 6.1.3. Common parasitics; 6.2. DPT layout design; 6.3. Case study; 6.3.1. Brief overview of WBG devices' package 
505 8 |a 6.3.2. Case study 1: TO-247 package SiC MOSFETs6.3.3. Case study 2: surface-mount WBG device; 6.3.4. With consideration of current measurement in DPT; 6.3.5. Gate drive; 6.4. Summary; References; 7. Protection design for double pulse test; 7.1. Overview of state-of-the-art protection scheme for WBG devices; 7.2. Solid-state circuit breaker; 7.2.1. Operation principle; 7.2.2. Circuit implementation and design consideration; 7.2.3. Test setup and procedure; 7.2.4. Case study; 7.3. Consideration for high-voltage WBG device DPT; 7.3.1. Safety consideration; 7.3.2. Protection scheme; 7.4. Summary 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Wide gap semiconductors. 
650 0 |a Power semiconductors. 
650 0 |a Electric capacity. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Zhang, Zheyu,  |e author. 
700 1 |a Jones, Edward A.,  |e author. 
776 0 8 |i Print version:  |a Wang, Fei (Fred).  |t Characterization of wide bandgap power semiconductor devices.  |d London : Institution of Engineering and Technology, 2018  |z 1785614916  |w (OCoLC)1022475837 
830 0 |a IET energy engineering series ;  |v 128. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpCWBPSD06/characterization-of-wide?kpromoter=marc  |y Full text 

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